Fabrication And Properties Of Ni Foil/PMN-PT Thin Film Magnetoelectric Composite System

Magnetoelectric(ME)composites have exhibited great potential applications in the field of electronic information technology due to their large magnetoelectronic coupling coefficients than single-phase magnetoelectric materials.ME composite films have attracted ever increasing attention because of their smaller size and high-integrity.In present work,Ni and PMN-PT were used as the ferromagnetic and ferroelectric phase,respectively.The effects of NiO and LNO buffer layer were systematically studied on the magnetoelectric coupling properties of composite system.The optimum process for preparing PMN-PT thin films via the sol-gel method on Pt/Si substrate was studied.The high-qualitied PMN-PT thin film in present work is annealed at 650°C for 20 min with the methanamide and 20% extra lead in the precursor.The effects of annealing temperature on the electrical properties of PMN-PT films and the magnetoelectric coupling properties of Ni/NiO/PMN-PT composites were studied in the Ni/NiO/ PMN-PT heterostructures.PMN-PT thin films displaying pure perovskite phase can be prepared by annealed at 700 and 750?,resulting in the good piezoelectric properties.The Ni/NiO/PMN-PT composites thus show excellent magnetoelectric coupling with the maximum ME coefficient of about 303 mV/cm?Oe.The LNO buffer layer was prepared on the Ni substrate via the sol-gel method.The influence of annealing temperature on the electrical properties of PMN-PT thin films and the magnetoelectric coupling properties of Ni/LNO/PMN-PT composites were systematically investigated.The results reveal the Ni/LNO/PMN-PT composites with the PMN-PT film annealed at 675? exhibit the best magnetoelectric coupling.And the best ME coupling display maximum ME coefficient of about 460 mV/cm?Oe.