Preparation Of CrN Based Film By High Power Magnetron Sputtering And Its Property Of Hydrogen Resistance

The face-centered cubic nitride hydrogen barrier film has a very low hydrogen diffusion coefficient,which can effectively reduce the diffusion rate of hydrogen in the genus material and protect the metal material.Among them,TiN is the earliest and most widely used,but TiN The film is easily oxidized at high temperature to produce rutile TiO₂,and the hydrogen barrier property is seriously weakened,and even the volume strain causes the film to crack and peel.Aiming at the problem of high temperature failure of nitride hydrogen barrier film,this paper uses high power magnetron sputtering technology to deposit CrN which has certain anti-oxidation performance,and enhances its high temperature oxidation resistance by incorporating Al element.The discharge characteristics test results show that when the Cr target is connected to the DC composite pulsed high-power power supply,the pulse voltage and pulse width increase,and the target sputtering rate and the substrate current increase.When the pulse voltage exceeds 580 V and the pulse width exceeds 250?s,the pulse is generated.The high-pressure suckback effect,the sputtering rate and the substrate current increase are small;the applied coil magnetic field can effectively restrain the electrons and increase the substrate current by an order of magnitude;the increase of the working pressure can also effectively increase the sputtering rate and the substrate current when the gas pressure exceeds 0.5 Pa,the increase in the matrix current is mainly contributed by Ar⁺and has little to do with metal ions.The results of structural and performance analysis of CrN hydrogen permeation resistance film show that with the increase of substrate bias,the deposition rate of CrN increases in direct injection mode,and the ion bombardment effect is enhanced.When the substrate bias voltage is 300 V,the columnar crystal growth in the CrN film layer is The delamination phenomenon occurs when the hydrogen atom diffusion coefficient is the lowest,which is 7.598×10^-10 cm²/s,which is three orders of magnitude lower than that of the stainless steel substrate.By changing the matrix bias mode,as the time interval between alternating high and low bias voltages is short,the ion bombardment effect is enhanced,and the hydrogen atom diffusion coefficient of the CrN film is lowered.The results of structural and performance analysis of CrAlN hydrogen permeation resistance film show that after Al is doped,the diffusion coefficient of hydrogen is lower due to the reduction of lattice gap size or direct filling of lattice gap due to Al substitution of Cr.As the bias of the substrate increases,the ion bombardment effect is more obvious when the CrAlN film is deposited in the substrate rotation mode,the deposition rate decreases,but the density of the film layer increases,the transverse interface between columnar crystal appears,the hydrogen atom diffusion coefficient decreases.When the substrate bias voltage is 300 V,the hydrogen atom diffusion coefficient of the film layer reached the lowest value,which is 6.188×10^-10 cm²/s.The high temperature oxidation test results show that the CrN film has certain anti-oxidation ability.The oxidation weight per unit area of the coating surface under the oxygen atmosphere at 600°C is about half of that of the stainless steel substrate,and the oxygen content at the film-based bonding surface is about 60%at the surface of the film layer.After the Al element is added,the oxidation resistance of the film is significantly improved.After high temperature oxidation,the oxidation weight gain per unit area of the coating surface is only half of that of the CrN film,and the oxygen content at the film-based bonding surface is only 30%at the surface of the film layer.