Research On Graphene Oxide Two-dimensional/Ferromagnetic Film Magnetic Heterojunction Spin-dependent Devices

Two-dimensional materials have received more attention due to their unique physical,chemical and electronic properties.In particular,the development of graphene has seen exponential growth in nanomaterials,which is in the fields of spintronics,materials science,semiconductors,and micro/nanotechnology.It is also because of its unique properties that two-dimensional materials can be used in many applications such as electronics,energy storage,and biomedical applications.Graphene oxide is one of the important branches of graphene because functional groups appear on the structure of graphene,and the oxidized functional groups affect their physical and electrical properties.This article includes:First,graphene oxide was prepared by a new way.The growth of traditional two-dimensional materials is not entirely suitable for graphene oxide.This article has adopted a new growth method.This article is based on the ultrasonically assisted spray deposition method,which enables highly controlled deposition of graphene oxide.This method is fully controllable for growing graphene oxide,including thickness,area,and mass,and is the most suitable method at present.Second,investigate the magnetic anisotropic magnetic Seebeck effect.Before growing graphene oxide,firstly explore the growth and characteristics of perpendicular anisotropy.In this paper,we use the structural growth of CoFeB/Mg(Al)O to prepare usable samples with perpendicular anisotropy.Third,investigate the effect of graphene oxide on perpendicular anisotropy.Magnetic tunnel junctions with perpendicular magnetic anisotropy have been extensively studied because they may reduce the size of the memory cell and enhance thermal stability.Large vertical magnetic anisotropy is a fundamental element of magnetic random access memory.At present,several graphene-based perpendicular magnetic anisotropic spintronic devices have been demonstrated.However,the effect of the graphene oxide film on the perpendicular magnetic anisotropy at the interface has not yet been confirmed.In this paper,the effects of graphene oxide films on the magnetic anisotropy are studied both experimentally and theoretically.Fourth,based on the above research,we will further explore voltage control devices.Nano-devices based on current magnetization induction have made significant improvements,but still want to find more excellent ways to regulate magnetic moments.The study found that the power can be further reduced by controlling the electric field.In the case of electric field conversion,it is only necessary to provide sufficient charge to charge/discharge the capacitor.This not only reduces the energy consumption by a factor of 100,makes it comparable to semiconductor field effect transistors,and adds non-volatile functionality.This part uses the anomalous Hall effect to characterize the magnetic properties of a patterned sample under an electric field.