The Regularity Research Of Interfacial Layer Materials Reducing The Contact Resistance In MIS Structure For 14nm Node

With the geometrical scaling of transistor,the conventional silicide has reached its limitation to serve for metal-silicon contact resistance reduction.Inserting a thin dielectric layer between metals and semiconductors to form metal-interfacial layer-semiconductor?M-I-S?contact seems to be a promising option in the candidate.In this study,the development of process for contact resistance reduction is briefly reviewed and the latest research progress of MIS structure is summarized.Based on MIGS model,dipole model and fixed charge model for Schottky barrier modulating mechanism,integrated with electric field,physical field and interface characteristics,the physical model and simulation method of MIS structure are studied.The new physical model was used to simulate and explore the regularity of interfacial layer materials reducing the contact resistance.Based on 12-inch wafer and 16/14nm node production process of SMIC,we studied the effect of different thin film deposition process,and characterized the formation of the interfacial properties of the thin film.It indicates that the atomic layer deposition is suitable to prepare ultrathin nano scale TiO₂ and Al₂O₃ interfacial layer,and the minimum resistance of MIS structure is comparable to NiSi.In addition,the possibility and method for special elements doping and improving salicide performance was explored.