Preparation And Photoelectric Properties Of Tin-based Perovskite Materials

Perovskite solar cells have made great progress.At present,the efficiency has reached 23%,and there is still a trend of improvement.Researchers are still in the ascendant,but due to the toxicity of Pb,people turned their eyes elsewhere.Tin-based perovskite materials are not toxic and stable,and excellent optical properties have attracted people's attention,this paper synthesizes tin-based perovskite materials in a relatively simple way and applies them to solar cells.The mian content can be divided into the following parts:Firstly,the perovskite materials Cs₂SnI₆ and Cs₂SnBr₆ were synthesized by a simple one-step solution method.The solid powders obtained were black and light yellow powders,respectively.Their structure and performance were studied.The results show that a pure perovskite material can be obtained by a simple solution method,and the two perovskite materials are relatively stable in the air,and do not change for 30 days.The light absorption range of the two materials is wide,and the optical band gap is 1.2eV and 1.39 eV,respectively.The two materials have better light absorption ability than Cs₂SnI₆.Secondly,the perovskite material Cs₂SnI₆ with better light absorption ability was prepared by electrodeposition method,and the film was optimized and tested.The time of electrodeposited film was 6-10min.If the time is too short or too long,the surface of the film will have more holes,which will affect the quality of the film.The optimized film was used as a dye in a dye-sensitized solar cell,but since the perovskite material was dissolved in the electrolyte,a device efficiency of 0.21%was finally obtained.Finally,based on previous experimental studies,all inorganic CsSnBr₃ perovskite solar cells were prepared by vacuum evaporation,and the effects of different hole transport layers MoO₃ and CuI on cell efficiency were investigated.Finally,a hole transport layer of MoO₃ was used to obtain a photoelectric conversion efficiency of 1%,and a hole transport layer of CuI was used to obtain a photoelectric conversion efficiency of 0.46%.