Preparation Of One-dimensional Ga₂O₃ Nanofibers By Electrospinning And Their Dopant Properties

?-Ga₂O₃ is a new wide bandgap semiconductor oxide material with a band gap of 4.9 eV and good stability.It can be used to make high-performance power devices,moreover it also has excellent electrical and optical properties,due to these characteristics,?-Ga₂O₃ is widely used in photoelectronic displays,photoelectric converters,gas sensors and solar ultraviolet detectors etc.With the rise of nanomaterials,because nanomaterials have their unique physical and chemical properties,such as surface effects,small size effects,quantum size effects,etc.,the preparation of semiconductor materials of nanoscale can enhance one of their characteristics,thus making its nature more obvious,the existence of these effects is essential for the future of special functional materials and micro-nano devices.Electrospinning is an important method for preparing one-dimensional nanomaterials.Electrospinning has the characteristics of simple operation,low cost and wide applicability.It has been highly studied by researchers in the field of synthesis and properties of low-dimensional oxide nanomaterials.Pay attention.This paper mainly studies the preparation of?-Ga₂O₃ nanofibers by electrospinning and its properties.In this paper,the morphology of inorganic nanofibers prepared under different spinning conditions was studied.Under certain conditions,the precursors of Ga₂O₃nanofibers were obtained.The crystallization conditions of the samples at different annealing temperatures were compared.With increasing temperature,Ga₂O₃ was obtained.Nanofibers gradually change from other phases to?-phase.Afterwards,the infrared spectrum,X-ray diffraction pattern,Raman spectrum and PL spectrum of the samples at different annealing temperatures were also compared and tested.These information showed the characteristic curve of?-Ga₂O₃.By analyzing the spectrum and spectrum of the sample,it can be seen that as the annealing temperature increases,the height of the XRD diffraction peak will become higher,which means that the crystallinity of the sample is better,and at the same time due to the increase of the annealing temperature,it will As a result,the oxygen vacancies in the sample are filled more completely,resulting in less oxygen vacancies,resulting in poor luminescence,and a slight blue shift of the PL peak is observed in this process.This is also due to the different annealing temperature for the luminescence of the sample change.