Because of its excellent properties,black phosphorus is widely concerned by the scientific community and is considered to be comparable with graphene in twodimensional atomic materials.Better than graphene,the bandgap of black phosphorus can be regulated by layers,absorbing wavelengths from the visible to the infrared range of communications.In addition,black phosphorus is a direct bandgap semiconductor,which converts electronic signals into light signals and has good optical response characteristics.Black phosphorus quantum dots is a kind of nanometer scale black phosphorus material,because of the quantum confinement effect and the edge effect,the black phosphorus quantum dots are expected to have more excellent photoelectric properties than the black phosphorus material.This paper presents an improved method for the preparation of black phosphorus quantum dots,it is mainly in the process of preparing black phosphorus quantum dots by ultrasonic assisted liquid phase stripping method,by Excimer laser irradiation to the sample,so that the black phosphor crystal powder can quickly form the black phosphorus nano-film,and then improve the efficiency of black phosphorus quantum dot preparation,and make the diameter less than 10 NM of black phosphorous quantum dots isopropyl alcohol solution.Using the obtained black phosphorus quantum dots,the black phosphorus quantum dot film was successfully prepared by electrophoresis deposition,and the deposition time and the cathode electrode specification were changed,and the film thickness and size of the black phosphorus quantum dots were regulated,and the black phosphorus quantum dot films of nm-4 thickness and 1-5 cm size could be prepared.In order to investigate the influence of the thickness dependence of black phosphorus quantum dots on its optical properties,the Raman spectra of the black phosphorus quantum dots prepared by the films were studied,and the Raman spectra of the films with different thickness were investigated and the formation mechanism was analyzed.In addition,the humidity sensor parts based on the black phosphorus quantum dot film have excellent sensitivity characteristics in the relative rh% = 20-90% range,and the field emission performance is preliminarily explored.The study shows that the black phosphorus quantum dots prepared by this method have strong controllability,simple and efficient method,and have excellent performance in the application of humidity sensor,and have a wide prospect in the field of device application. |