Preparation And Properties Of Re_1-xMo_xS₂ Nano Structures

In recent years,because of its unique layered crystal structure,excellent electrical,optical,mechanical,electrochemical,catalytic properties,MoS2 has shown great potential in microelectronics,photoelectronics,sensors,electrochemical energy storage,clcctrocatalytic hydrogen production and other fields,it has aroused extensive interest of researchers.Although MoS2 is widely used,its application in some fields is limited because of the great restriction in realizing the continuous regulation of energy band single component.In order to make MoS2 widely used in nano-electronic devices and photoelectric devices,its band regulation becomes very important.In view of this problem,it has been pointed out that alloys and doping can be used to regulate the energy gap of two-dimensional materials,and semiconductor ternary alloys also have extremely stable thermodynamic properties.However,due to the melting point of metal rhenium is as high as 3180 'C and rarely used as a doping agent or reaction source to regulate the energy gap of MoS2.In view of this,this paper explored the controllable preparation and characterization of molybdenum rhenium sulfide(Rc1-xMoxS2)of ternary alloy.The main research work and results are as follows:1.Flower morphology and film morphology of Re1-xMOxS2 were obtained by optimizing process parameters.The Re1-xMoxS2 with flower morphology was transferred to the glass slide by dry transfer and its light energy gap was measured as 1.77ev.2.The Re1-xMoxS2 film was grown on mica substrate and the light energy gap was measured as 1.73eV.In addition,the effects of different substrates on the Re1-xMoxS2 film morphology were compared.3.ReS2 was successfully prepared using high melting point rhenium as rhenium source,the experimental test showed that the light energy gap of ReS2 was 1.5ev,which was consistent with the multi-layer light energy gap of ReS2 prepared by Te assisted Re as rhenium source reported in the literature.