Study On Controllable Growth And Optoelectronic Properties Of MoS₂/MoO₂ Heterostructures

In recent years,with the discovery of graphene,two-dimensional materials have also begun to flourish.Among them,the transition metal chalcogenide is an important member of the two-dimensional material family,and has attracted extensive attention in the field of materials science due to its excellent performance.As a typical transition metal chalcogenide,MoS₂ has many peculiar physical properties.Studies have shown that monolayer MoS₂ has a direct band gap with a band gap width of about 1.80 eV,which is in transistors,photodetectors,photovoltaic cells and other aspects have great application prospects and are ideal materials for building next-generation electronics and optoelectronic devices.As a relatively early discovery of two-dimensional materials,the controlled growth of MoS₂ has made great progress.However,there are still many problems in how to improve metal contact during the construction of optoelectronic devices.To this end,this paper has carried out systematic research work on how to improve the contact between metal and two-dimensional materials.?1?In this paper,the MoS₂/MoO₂ heterostructure was prepared by chemical vapor deposition using a two-temperature zone tube furnace.During the experiment,S powder is used as the sulfur source,MoO₃ powder is the molybdenum source,Si/SiO₂?300 nm?is the growth substrate,and argon is the carrier gas.The paper systematically studied the growth conditions of MoS₂/MoO₂ heterostructures.The results show that a large number of MoS₂/MoO₂ heterostructures can be prepared and characterized by optimization of experimental conditions.?2?Three different devices for molybdenum disulfide were constructed during the experiment:a separate triangular molybdenum disulfide device,one end of the electrode connected to MoS₂/MoO₂ heterostructure device on molybdenum dioxide,and both ends with molybdenum dioxide as electrode MoS₂/MoO₂ heterostructure devices.By measuring the in-situ growth of molybdenum dioxide as an electrode,the contact between the electrode and the sample can be improved to some extent,and the mobility is improved.A new method for improving metal contact by in-situ growth of electrodes has been proposed.In addition,the effects of temperature and illumination on the electrical properties of the MoS₂/MoO₂ heterostructure device on the molybdenum dioxide at one end of the electrode were tested.As the temperature increases,the field effect transistor current and mobility both increase.The photocurrent becomes large under illumination,and as the wavelength becomes shorter,the response current becomes larger,and the response rate becomes larger.