Transient Characteristics Of Semiconductor Materials And Dielectric Materials

Semiconductor devices are the cornerstone of current electronic information industry.How to realize the transient control of semiconductor materials and dielectric materials is the key technology to realize the transient electronic devices and integrated circuits.Therefore,this paper focuses on the study of transient semiconductor materials and dielectric materials,the transient and electrical properties of ZnO and IZO semiconductor materials are studied.And the transient and electrical properties of conventional media?such as SiO₂?and high-k media?such as Al₂O₃ and MgO?are investigated.The design method of transient semiconductor and dielectric material,key preparation technology and transient degradation characteristic test technology is Mastered;The physical process of material degradation is defined and the physical model is constructed.In this paper,basing on the study of degradable semiconductor materials,IZO films annealed at different temperatures are prepared using the method of solution method.After then,the effects of temperature and the number of film layers on transistor performance are investigated.When spin coating two layers and annealing under 350?,the mobility of the device can be achieved 9.5 cm²/V·s,the threshold voltage V_TH is 9 V,switching ratio(I_on/I_off)is 4.71×10⁶.Then the device is immersioned in 37?DI-water to research the transient characteristics of the TFT device,The performance decrease significantly after soaking 2mins and complete failure after soaking 4 mins.At last,the transient characteristics of ZnO films growning by solution method and magnetron sputtering technology are studied.In view of the research on degradable dielectric materials,Al₂O₃ thin films are grown by ALD technology,and the influence of temperature and PH on the dissolution characteristics of Al₂O₃ materials are explored.When the TFT devices are prepared with Al₂O₃ as the gate dielectric layer and IZO as the channel layer.The mobility of devices can be achieved 6.02cm²/V·s,the threshold voltage is-1 V,and the switching ratio(I_on/I_off)is 1.36×10³.Then the devices are soaked in 37?PH 6 phosphate buffer to study the transient characteristics of TFT devices,and the performance of devices are complete failure after soaking 4 min.After growing MgO style film by magnetron sputtering technology and studying the different sputtering power and annealing temperature on the influence of the film surface morphology,it finds that the sputtering power 150 W and annealing temperature of 500?is able to get better film quality.Further exploring the transient characteristics of MgO film,it is found that it showed good dissolution characteristics under acidic environment,and complete dissolution can be achieved within a few minutes.After that,the electrical characteristics of MgO are studied,results showed that the leakage current is as low as 5.8×10^-6 A/cm² under the unit field strength,showing good insulation characteristics.Then the thin film transistors are prepared by using MgO as the dielectric layer,and their transient characteristics are studied.It is found that the devices are completely deactivated after dissolving for 4 mins.At last,SiO₂ thin film is grown by E-beam technology and its transient characteristics are studied.It is found that it could be dissolved under alkaline environment for hours to dozens of days.