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Synthesis Of Polysiloxane Containing Donor-Acceptor Side Chain Structure And Its Flexible Ternary Memory Properties

Posted on:2020-08-19Degree:MasterType:Thesis
Country:ChinaCandidate:L FuFull Text:PDF
GTID:2381330602460679Subject:Chemistry
Abstract/Summary:PDF Full Text Request
With the increase of information capacity,the traditional silicon-based memory will not meet the requirements of information storage.At the same time,the pursuit of electronic devices is becoming more and more miniaturized and wearable.There is an urgent need to find new ways to meet the needs of high-density storage and micro-wearables.In recent years,ternary organic electric memory devices based on organic materials have attracted the attention of researchers,and their multi-component storage and flexibility of organic materials are promising to solve the above problems.In this paper,polysiloxane PBTPASi with a side group containing one electron donor and two electron acceptors was designed and synthesized.The DCS and TG tests of PBTPASi showed that it has good thermal stability.AFM test shows that PBTPASi has good film-forming ability,CV test and molecular simulation determine the appropriate energy level distribution and energy gap value of PBTPASi.Then a flexible memory device was prepared using PBTPASi and an existing alternating polysiloxane P(INDISi-alt-CzSi)containing a naphthalimide imidazole receptor and a carbazole acceptor pendant group as active layers,respectively.Through the J-V test,it is proved that the prepared memory devices Al/PBTPASi/ITO/PET and Al/P(INDISi-alt-CzSi)/ITO/PET are ternary memory devices,and their switching voltages ONI and ON2 are respectively:0.75V,1.35V and 0.5V,1.0V,switch current ratios are:106:104:1 and 105:102:1.Both the memory devices have good stability and fast response speed,with good ternary memory performance.In addition,the J-V test after bending and aging the device shows that the ternary memory characteristics of the devices are not changed after bending and aging.The result suggest that both the two flexible memory devices have good flexibility and stability.Furthermore,the storage mechanism of the devices were explained.The bistable state behavior of the two polysiloxanes with different side structures were explained by the charge transfer after conformation transformation and charge trap,and the proposed mechanism was proved by XRD,UV-vis and fluorescence spectroscopy.
Keywords/Search Tags:Donor-Acceptor, Polysiloxane, Ternary memory, Flexibile device
PDF Full Text Request
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