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Research On Electrical Properties And Process Parameters Of Alloy Film Resistance Strain Sensor

Posted on:2021-05-23Degree:MasterType:Thesis
Country:ChinaCandidate:Y W HanFull Text:PDF
GTID:2381330602468778Subject:Mechanical engineering
Abstract/Summary:PDF Full Text Request
The rapid development of advanced manufacturing technology has made rapid progress in the direction of high precision,high sensitivity and convenience for sensors.Based on microelectromechanical systems(MEMS),the design and preparation of alloy thin film resistance strain sensors for different measurement environments have a wide range of application needs and research value.The sensitive layer of the alloy thin-film resistance strain sensor is taken as the core structure.Through theoretical analysis,experimental research and process optimization,the electrical properties are discussed in depth,which is of great significance to the improvement of the thin-film sensor's measurement accuracy and sensitivity.In this paper,the model of alloy thin film resistance strain sensor is designed and constructed,and the relevant parameters such as the structure type,material selection,performance index and function of each part of the thin film sensor are systematically analyzed.The tool cutting force measurement is used as the carrier of the alloy thin film resistance strain sensor,and the nickel chromium(NiCr)film sensor tool cutting force measurement system is designed.In order to improve the output response,the cutter structure was improved,and the optimal position of the film sensor was determined.The working principle of the measurement system's conversion from cutting-edge cutting force input to voltage output response is analyzed.Based on thin film roughness theory and thin film resistance strain effect,the main factors affecting the electrical performance(resistance and resistance strain coefficient)of thin film resistance grid are analyzed.This paper proposes the process flow of applying ion beam etching technology to the patterning of positive photolithography film(PIBE),and compared with the process flow of using negative photolithography film patterning(PMS).Orthogonal test method was used to design the optimized analysis test of the effects of process parameters(substrate temperature,target base distance,negative bias)on the electrical properties of the film during the preparation of the magnetron sputtering nickel-chromium film,Ni-Cr film ion beam etching process parameters(incident angle,screen voltage,argon flow rate)on the thin film electrical properties of the resistivity and film roughness and other optimization analysis test,and through the analysis of variance,variance Analyze the influence of process parameters.X-ray diffractometer,scanning electron microscope and atomic force microscope were used to analyze the nickel-chromium film composition and surface quality.The results show that the influence of substrate temperature on the roughness and resistivity of the film is more obvious,and the optimized NiCr film preparation process parameters are negative bias voltage 100 V,target base distance 60 mm,and substrate temperature 300?.During ion beam etching,the influence of screen voltage and incident angle on film roughness and resistivity is obvious,and the optimized NiCr film etching process parameters are screen voltage 450 V,incident angle 45°,argon flow rate 7.5sccm.The effect of thin-film sensors with different geometrical dimensions(length,width,thickness)prepared by the two thin-film patterning methods on resistance and resistance strain coefficient was compared and analyzed.The results show that the thin film sensor prepared by PIBE is superior to PMS in resistance error and resistance strain coefficient,and the vertical gate width has the greatest influence on the film resistance and resistance strain coefficient.The best geometric dimensions of the thin film resistor grid prepared by PIBE are the vertical grid width 0.1mm,the vertical grid length 3mm,and the vertical grid thickness 1000 nm.The electrical properties such as resistance value and resistance strain coefficient perform well.Combine the thin film resistance strain sensor with the carrier for static analysis,the force measurement system has good linearity,and the measurement error is less than 8%,which has a good static strain output effect.
Keywords/Search Tags:thin film sensor, nickel-chromium alloy, process optimization, thin film patterning, resistance strain coefficient
PDF Full Text Request
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