Research On The Growth Of Few-layer G Raphene Based On Circulating CVD Technology

Since the discovery of magic-angle graphene has special electrical properties of insulating phase and superconducting phase,the research on the electrical properties of twisted bilayer graphene and few-layer graphene has become a hot spot in the field of scientific research.At present,neither twisted bilayer graphene nor few-layer graphene has a good preparation method,which greatly limits the theoretical and scientific research of twisted bilayer graphene and few-layer graphene.Therefore,the preparation of twisted bilayer graphene and few-layer graphene by chemical vapor deposition is of great significance.This paper mainly uses the parameters that control the pressure of the reaction chamber,the growth temperature,and the flow ratio of hydrogen to methane when growing graphene in the CVD system to study the growth process of twisted bilayer graphene and few-layer graphene.At higher pressure,it can break the self-limiting effect of graphene growth to grow "Linglong Pagoda"-shaped few-layer graphene and regulate the temperature of the reaction chamber during graphene growth to grow twisted bilayer graphene with different stacking angle distributions.The research in this paper is of great significance.It provides an excellent sample preparation method for the photoelectric properties of twisted bilayer graphene and few-layer graphene.This research has made a substantial advancement in the theoretical and experimental research on twisted bilayer graphene and few-layer graphene.