Pulsed Laser Deposition Of Sb₂（S,Se）₃ Thin Film And The Photovoltaic Properties

Metal chalcogenide semiconductor materials have attracted much attention in the application of photovoltaic devices due to their advantages such as good stability and abundant element storage.Among them,Sb2(S,Se)3 has the characteristics of adjustable band gap,high absorption coefficient,high stability and non-toxicity,which makes this kind of solar cell have bright commercial prospects.According to the Shockley-Queisser limit,the theoretical maximum photoelectric conversion efficiency of Sb2(S,Se)3-based solar cells can reach 32%.In addition,the carrier diffusion length of the antimony selenium sulfide is in the range of hundreds of nanometers,rendering the feasibility of fabricating either sensitized or planar heterojunction solar cell configurations.These studies indicate that selenium antimony sulfide alloy has good practical application prospects.At present,the PCE of solar cells with Sb2S3,Sb2Se3 and Sb2(SxSe1-x)3 as light-absorbing materials reaches 7.5%,9.2%and 6.63%,respectively.But with mature solar technology,its efficiency needs to be further improved.Pulsed laser deposition(PLD),as a simple and versatile technology,has been widely used in the growth of various thin-film materials such as metals,oxides,and polymers.This deposition technique can grow high-quality thin films of multi-component compounds that are nearly identical to the target composition,and provides the possibility of adjusting the composition of the thin film by controlling the composition of the precursor material.This research is to develop a new physical vapor phase method to deposit high purity and high crystallinity Sb2S3 thin films.Furthermore,the band gap is adjusted by in-situ selenization to improve the absorption of the film in the long wavelength band.Chapter 1 elaborates the basic principles and performance parameters of solar cells,and introduces the development process and research status of solar cells,and introduces several commonly used thin film preparation methods.At the end of this chapter,the research contents of this paper and the innovations of the paper are introduced.Chapter 2 introduces the basic principles and characteristics of pulsed laser deposition,and then introduces the thin film characterization techniques and device testing methods used in this paper.Chapter 3 introduces the process of Sb2S3 thin film and device assembly prepared by pulsed laser deposition,and explores the effect of deposition time and Sb/S ratio on film morphology and device performance.After optimizing the growth parameters,the efficiency of the Sb2S3 solar cell prepared based on pulsed laser deposition reached 2.56%.Chapter 4 introduces the use of pulsed laser sputtering Sb2S3 and Se powder mixed target,prepared Sb2(S,Se)3 thin film and assembled into a battery.The effect of S/Se ratio on the crystallinity,morphology and band gap of the thin film was explored,and its influence on battery performance was also analyzed.Chapter 5 summarizes the work of the graduate students and prospects the follow-up development of the research work.