Design,Synthesis,Photoelectric Properties And Application Study Of Naphthalene Diimide Derivatives With Aggregation-Induced Emission

Organic semiconductor materials with high conductivity and strong concentrated emission are ideal materials for organic light-emitting transistors and lasers.However,the fluorescent of conjugated molecules with high conductivity tend to be attenuated and quenched due to the aggregation quenching effect?ACQ?,resulting in very few materials with both high charge transport capacity and high solid emission.The materials with aggregation induced effect?AIE?have strong photoluminescence in the aggregation state.At present,there have been a few reports on design strategy of AIE material to obtain both aggregation luminescence and n-type carrier transport.However,the electron mobility of AIE is still low,which is difficult to be applied in practice.Naphthalenediimide?NDI?has been widely used in n-type organic field-effect transistors?OFET?because of good planar and electron-absorbing ability,and it has a certain fluorescence in the aggregation state,it is a potential candidate molecule for designing materials with high charge transport capacity and high solid-state emission.In this paper,we plan to study the carrier mobility and solid-state luminescence characteristics of materials which through the design strategy of AIE material,combining the NDI core and typical AIE structural units,so as to obtain a materials with high carrier mobility and efficient solid-state emission.The main research contents and results are as follows:?1?The molecule TEN with NDI as the core and connected to AIE unit by double bonds was designed and prepared.The structure of the material was determined by means of NMR and crystal analysis,and the single crystal structure of TEN indicated the presence of C-H…O in and between molecules.And hydrogen bond induced a special one dimensional stacking structure.?2?The fluorescence characteristics of TEN were studied.The near-infrared solid fluorescence emission peak of TEN was 700 nm,and the photoluminescence efficiency over 60%.A top-gate bottom-contact OFET device based on TEN was fabricated,which showed high bi-polar charge migration,hole mobility up to 0.13 cm²v^-1s^-1,and electron mobility up to 0.01 cm²v^-1s^-1.The morphology of TEN films was analyzed with AFM and XRD,found that the special one-dimensional stacking structure observed in the crystal played a key role in promoting carrier mobility and maintaining solid fluorescence.?3?TEN nanoparticles?NPs?were prepared,and showed good biocompatibility by MTT method,and good imaging results were obtained in the imaging study of cells and live mice.