Study On Kinetics And Grain Boundary Character Distributions Of Primary Recrystalliztion Of Low Temperature Grain-Oriented Silicon Steel

Due to the low heating temperature and low energy consumption,the low temperature grain-oriented silicon steel has been paid more and more attention.Compared with the traditional production,the quality of low temperature grain-oriented silicon steel has been improved in the productivity,soft magnetic properties and so on.Using Zeiss Axioplan metallographic microscope,HV-1000 B hardness tester and EBSD to research texture,microtexture evolution,GBCD in primary recrystallization of different layers and establish primary recrystallization kinetics model.The results show:?1?The annealing temperature has a great influence on the primary recrystallization process.When the temperature is about 625 ?,the process could completed by more than 1.7h.When the temperature is about 850?,the recrystallization could finish in 5s.?2?After primary annealing,the main textures are ? fiber,{114}<418> texture and a little Goss texture with no advantage of grain size.The average grain size is inhomogeneity along the thickness which decreases gradually from the surface to the center layer.The grain size form surface to center are 24.7?m,23.4?m,23.1?m respectively.?3?The primary recrystallization kinetics was established based on the Avrami equation.The value of Avrami exponent n was significantly different between low temperature and high temperature area.When the annealing temperature at 625⁷00? the value of n is between 0.82⁰.89,and the Q_RX is 239.3k J×mol^-1.The value of n is between 1.25¹.27,and the Q_RX is 160.4k J×mol-1 at the temperature of 750⁸50?.?4?The misorientation distribution of Goss grains in the surface,subsurface and central layers of the primary recrystallization texture are mainly concentrated in 20⁴5°.The grain boundaries adjacent to the Goss grains are mainly HE boundaries.It is found that the CSL grain boundaries around the Goss grains are negligible.?5?The {111}<112> texture which in favor of Goss grain' s growth is well developed in the early stage of secondary recrystallization.At that stage almost all Goss grains are surrounded by HE grain boundaries and plenty of grains with misorientation at 30³5° to Goss could be found.