| The semiconductor memory is one of the most basic components of the electronic equipment,which is an important part of modem information technology.With the rapid development of Internet,people’s demand for massive data is increasing.Therefore,people hope to get high-performance,cheap memory to store data.Now,floating gate based flash memory(Flash)has achieved great success,occupying the main status of memory.But with the rapid development of the semiconductor industry,flash memory is facing a great challenge,including the high voltage,slow speed,poor durability,and the size is close to the physical limits.Because of its low energy consumption,fast storage speed and high storagedensity,the resistive memory is favored by people.Because the ferroelectric resistance memory has the characteristic of spontaneous polarization,when ferroelectric thin film is used,ferroelectric material can regulate the current passing through to achieve non-destructive information reading,The resistive switching modulated by ferroelectric polarization is called ferroelectric resistive switching,which is intriguing for the potential application in next-generation nonvolatile memories.The ferroelectric resistive switching effect has been revealed in many ferroelectric thin films and ferroelectric tunneling junctions(FTJs)based on ferroelectric ultrathin films.In our previous research.An important performance parameter of resistive memory is resistance ratio(resistance switch).The ratio of resistance is the ratio of the resistance in the two states.In the resistive memory,the larger high and low resistance ratio can reduce the bit error rate of the information storage.So the size of the resistive switch can reflect the performance of the resistive storage.PZT is a widely used ferroelectric material,which can be used in the middle fields of ferroelectric memory and micro electromechanical systems.In previous studies,we found that the maximum ON/OFF ratio in the PZT/Nb:STO heterostructure is related to the ferroelectricity and conductivity mutually restricting in the PZT film.In this study,to further improve the maximum switching ratio,we deposited La-doped Pb(Zr0.52Ti0.48)O3(PLZT)thin films on Nb:SrTiO3 substrates by sol-gel method,and the effect of La contents on the ferroelectric resistive switching was investigated.When the La content is about 2 mol%in the PLZT films,the ON/OFF ratio above 104 was observed,which is an order of magnitude larger than reported.Our results show that by adjusting the ferroelectricity and conductivity of ferroelectric thin films,the maximum switching ratio can be further improved. |
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