Application Of Defect-rich Hexagonal Boron Nitride For Electrochemical Sensor

Nowadays,water pollution has been drawing extensive attention due to its harm to human health and ecological systems.Thus,fast and accurate detection of pollutants is pivotal for their identification as well as water purification.Among all the analytical methods,electrochemical technique has attracted great interest because of its good sensitivity,rapid response,portability,simple handing and inexpensiveness.The key issue in the electrochemical detection is the design of an effective sensing interface based on suitable electrode materials.In this work,defect-rich hexagonal boron nitride was prepared via one-step calcination route using a single-source precursor and then was employed to fabricate new electrochemical sensors.The analytical properties of sensors were systematically investigated and these sensors were successfully applied for the real sample assay.The main research contents are as follows:Part ?:D-h-BN was prepared by a one-step calcination process using melamine borate as single-source precursor,which was synthesized via a chemical precipitation strategy.The obtained D-h-BN was characterized by XRD,FTIR,TEM,EDX,BET and PL.The PL results evidenced that the as-synthesized h-BN was highly defective.Part ?:The D-h-BN was employed to modify glassy carbon electrode(GCE)using Nafion as binder.The modified GCE exhibited the enhanced electrochemical response towards lead ions as compared to that of pristine h-BN.Accordingly,the sensor presented the low detection limit of 0.2 ?g/L towards Pb2+ and the linear response range was over the concentration from 0.5 to 400 ?g/L(correlation coefficient=0.995).In addition,the sensor showed excellent stability and good anti-interference ability.The proposed method was applied for Pb2+detection in real sample and showed the satisfactory results.Part ?:The D-h-BN/GCE sensor was applied for the simultaneous determination of 4-aminophenQl(4-AP)and phenol(Ph).By using DPV method,the linear detection ranges between concentrations and current intensities of 4-AP and Ph were 0.01-30 and 0.1-30 ?M,respectively.The detection limits were estimated to be 0.003 for 4-AP and 0.033 ?M for Ph,respectively.Moreover,the desirable selectivity and reproducibility make the proposed method successfully applied for real sample assy.In conculsion,defect-rich h-BN nanomaterials have been prepared and they have potential applications in the construction of electrochemical sensor.The mechanism of microstructure-property based on defect level was proposed and our work provides a new insight in the design of electro-active material for sensor construction through defect engineering.