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Single Layer Graphene Field Effect Transistor And Artificial Synapse Based On Triboelectric Micro Plasma Control

Posted on:2021-01-31Degree:MasterType:Thesis
Country:ChinaCandidate:S ZhangFull Text:PDF
GTID:2381330605954345Subject:Materials Science and Engineering
Abstract/Summary:PDF Full Text Request
Graphene is one of the most promising two-dimensional nanomaterials due to the advantages of excellent mechanical strength,high thermal conductivity,strong light substance interaction and excellent electronic properties.And high-performance field effect transistors based on graphene are the most attractive applicationCurrently,the business applicable of field effect transistors based on graphene have not been produced because graphene lacks the band gap required for transistor materials.Therefore,adjusting the energy band structure of graphene is the focus in of current-research.The energy band engineering of graphene is mainly consist of chemical methods and physical methods.The chemical methods mainly include the addition of functional groups,defects,doping,substrates bonded chemically,quantum confinement,edge effect and so on.The physical methods mainly include the external field,the interaction between substrates,physical adsorption,strain,multi-body effect,spin orbit coupling and so onAmong them,physical adsorption is an effective method to adjust the energy band structure of graphene which retains the C-C bond through sp2 hybridization in the hexagonal lattice.It has aroused wide attention of researchers.Adjusting the energy band of graphene through physical adsorption can be attributed to the rearrangement of electric charges,the adjustment of electric potential and the formation of moire fringes.In fact,some common gas molecules in the air,such as O2 and N2,which are difficult to spontaneously adsorb on the surface of graphene to complete the regulation of the graphene energy band due to the mismatch of energy level orbits.Therefore,it is very important to realize the adsorption of common gas molecules on the surface of graphene and develop new functions of graphene transistors by novel technical methodsBased on the research background,this paper mainly designs and constructs a new type of graphene field effect transistor by quantitatively controlling the adsorption and desorption of gas ions on the graphene surface with the tip gas discharge of the triboelectric nanogenerator(TENG),which has a extremely large switching ratio.Furthermore,A new type of artificial synapse also has been developed based on the gas-ions gate technology(GIG)of TENG by changing the type of gas ions adsorbed.The main research contents are as follows:Firstly,a GIG field-effect transistor based on graphene-based GIG control technology developed using air discharge driven by TENG was designed and constructed.O2-ions are generated by negative corona discharge in O2 and adsorbed on the surface of graphene to form a floating gate.The amount of O2-adsorption can be controlled by adjusting the number of discharges and the distance.When the amount of O2-adsorption is small,the graphene conductivity increases;when it is more,the graphene conductivity decreases greatly,and the graphene band gap is opened.O2-adsorbed on the surface of graphene to apply negative gate pressure to the graphene,transfer the electrical properties of graphene to P-type semiconductor,and realize reversible regulation by desorption through heating.In summary,this experiment developed a graphene field effect transistor with a very large switching ratioSecondly,the N2+ produced by the positive corona discharge in N2 adsorbed on the graphene surface to regulate its energy band.A new type of artificial synapse was designed and prepared by taking advantage of the easy desorption of N2+ on the graphene surface.First,based on the bipolarity of graphene,TENG is used to convert mechanical signals into electrical signals,quantitatively control the adsorption of N2+ ions on the surface of graphene,and then adjust the concentration and type of graphene carrier to achieve a mechanical signal.Later,by fine-tuning the discharge parameters,the synaptic behaviors of excitatory synapse,inhibitory synapse,long-term plasticity and short-term plasticity were simulated.Finally,the adsorption and desorption process of N2+ was discussed,and the desorption energy of N2+ on the graphene surface was calculated to be 182 meV,which revealed the physical mechanism of its synaptic behavior.
Keywords/Search Tags:Triboelectric Nanogenerator, Gas Ion Grid, Graphene, Field Effect Transistor, Artificial Synapse
PDF Full Text Request
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