Preparation And Performance Of Perovskite/ZnO Heterojunction Self-Driven Imaging Photodetectors

In recent years,perovskite materials have been widely used in the fields of photodetectors,solar cells,and light-emitting diodes due to their superior photoelectric properties.In particular,its high carrier mobility and easy-to-adjust band gap width have led to the development of many high-performance photodetectors based on perovskite.From an energy point of view,self-driven photoelectric detectors can be used in long-term unattended environmental monitoring and forest fire warning and other fields have important application prospects,and have been widely concerned by researchers.Self-driven photodetectors are realized through three device structures:pn junction,heterojunction and Schottky junction.In comparison,the pn junction device structure becomes the most important structure for preparing self-driven photodetectors because it can form a strong self-built electric field,thereby obtaining high-performance self-driven photodetectors.In this topic,we have referred to its development status and carried out the following work.We first prepared an MS-structured perovskite photodetector,and characterized the sample and tested its electrical and optical properties.Then we prepared high-quality ZnO microwires,and using n-type ZnO microwires and p-type MAPb I₃materials,through simple stacking,construct a MAPbI₃/Zn Oheterogeneous pn junction self-driven photodetector and explore its details Photoelectric performance and imaging capabilities.The specific research work is as follows:1.Use spin coating to grow MAPb I₃ perovskite film on the sapphire substrate,and test the photoelectric properties of the perovskite film by means of modern material characterization.Using the perovskite thin film as the light absorption layer,a photoconductive photodetector was prepared and its device performance was characterized.2.Use chemical vapor deposition（CVD）to prepare ZnO microwires,and use modern material characterization methods to test the morphology and photoelectric characteristics of ZnO microwires.3.Using a single ZnO microwire and MAPbI₃ film,a simple physical stacking method was used to construct a MAPb I₃/ZnO heterogeneous pn junction photodetector,and its photoelectric characteristics and imaging capabilities were explored in detail...