Study On The Preparation Of Thin Film Photovoltaic Materials By Pulse Laser Deposition And Their Photoelectric Properties

In recent years,perovskite materials have become a research focus in the photovoltaic field;Bi₂FeCrO₆?BFCO?,a kind of inorganic lead-free perovskite oxide materials,shows great potential in photoelectric conversion.In this study,BFCO thin films were prepared by pulsed laser deposition?PLD?technique to combine with different oxides and sulfides to construct planar heterojunctions,and their photoelectric properties were explored,specifically:The effects of substrate and deposition temperature on properties of BFCO films deposited by PLD were studied.Scanning electron microscope?SEM?,atomic force microscope?AFM?,X-ray diffractometer?XRD?,and energy dispersive spectrometer?EDS?were used to characterize and analyze the morphology,surface roughness,crystallinity and elemental content of the films.The BFCO was combined with TiO₂ to construct BFCO/TiO₂ double-layer structure,which demonstrated superior electrical performance to single-layer BFCO film.PLD technology was used to prepare Cu₂ZnSnS₄?CZTS?,ZnS,and CdS films on FTO substrates with different deposition temperatures,and their effects were analyzed by SEM and XRD measurements.The results showed that the temperature had little effect on the surface morphology of the CZTS film,and the band gap was close to the value reported in literature.The ZnS/CdS/CZTS multilayer structure was deposited in-situ on the FTO substrate by PLD.Electronic tests demonstrated good rectification characteristics,and the leakage mechanism was in accordance with the Schottky emission model.P-type semiconductor compound CZTS was selected to be coupled with BFCO as a hole transport layer.The BFCO/CZTS semiconductor heterojunction was obtained by in-situ PLD deposition.Electronic tests demonstrated that the heterostructure had good rectification characteristics;the heterojunction rectification ratio decreased significantly as the film deposition time increased;meanwhile,the leakage mechanism of the structure could be described by the Schottky emission model.