Nitrogen Ion Irradiation Effect On SiO₂ Wave-transmitting Ceramics

Fused silica ceramics have become the third generation of wave-transmitting materials,which are widely used in the production of radomes,and they will be exposed to different degrees of ion irradiation during the operation of the radome.Therefore,the material needs to be ionized to determine the irradiation Influence of structure and performance.In this paper,fused silica ceramic is used as the research material,and it is irradiated with nitrogen ions of different energy and fluence,and the material before and after irradiation is analyzed and tested by means of dielectric test,SEM,XRD,Raman,XPS and other analytical test methods.The effects of nitrogen ion irradiation with different energy and fluence on the dielectric properties and internal structure of the material are obtained.After irradiated fused silica ceramics,the dielectric constant and loss test were carried out.The dielectric constant and loss tangent were increased,and the stability of both was decreased.After conducting a Raman test,it was found that the characteristic peaks of Si O2 all decreased,and some of the characteristic peaks increased after ion irradiation with higher energy fluence.Scanning and testing showed that ion incidence can reduce the surface roughness.After XPS testing,it was found that new bonds and new free ions will be generated inside after irradiation.After the simulation,it is found that the sputtering rate of O in the material is greater than that of Si.The results show that the material has the smallest change rate of dielectric constant after irradiation with nitrogen ions at 110 ke V and 1 × 1015cm-2.Under the condition of 110 ke V,1E16cm-2,there is a large amount of free Si,O and N in the material.When the irradiation conditions are 90 ke V and 110 ke V,1E15cm-2,there is no free Si,N,O,three in the material The ions are combined into three kinds of bonds.In this case,the polarizability of the ions is limited due to the bonds formed,so the polarizability inside the material is low,so the rate of change of the dielectric constant of these two materials is extremely low.Therefore,the internal polarizability of the material will be greater than that of 90 ke V and 110 ke V,1E15cm-2,so the dielectric constant of the material irradiated under the previous irradiation conditions will be greater than the latter two.