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Preparation And Performance Test Of Single Ni-NiO Core-shell Nanowire/ZnO Nanofilm UV Photodetector

Posted on:2020-03-30Degree:MasterType:Thesis
Country:ChinaCandidate:Z B DongFull Text:PDF
GTID:2381330614464682Subject:Optical Engineering
Abstract/Summary:PDF Full Text Request
As an important part of nanomaterials,one-dimensional?1D?nanomaterials have received considerable attention because of their unique one-dimensional structure.One-dimensional nanomaterials have many advantages,such as large surface-to-volume ratio,quantum-limited carrier transport,and low reflectivity due to light scattering and trapping,which improve photon collection efficiency during photo-electric response.It is therefore considered to be a promising option as constituents of solar cells and photodetectors.In this paper,the NiO 1D nanomaterials prepared by the combination of chemical reduction and post-annealing were studied.The influence of annealing temperature on the microstructure and composition of NiO 1D nanomaterials was studied;The 1D NiO nanomaterials were combined with ZnO thin film by traditional integrated circuit processing to construct a novel self-responsive UV photodetector,and its performance was tested and analyzed.The main results are as follows:1. The kinetics of oxidation of Ninanowire during annealing was studied.It was found that when the annealing temperature reached 425?,the nanowires formed open structures at both ends;2. A single Ni-NiO core-shell nanowire/ZnO nanofilm UV photodetector was fabricated by integrated circuit process.The results show that the device has good p-n junction characteristics,its rectification ratio is up to 2000,and the turn-on voltage is0.5 V;3. Single Ni-NiO core-shell nanowire/ZnO nanofilm UV photodetector has good UV response.In the test of photovoltaic effect,it was found that the photoelectric response of the device reached a maximum value of 17 m A W-1 at 312 nm;the photocurrent increased with the increase of the illumination intensity under 365 nm ultraviolet light,and the maximum ratio of photocurrent to dark current is 7,the rise time of the device is about 50 ms,the recovery time is about 2.9 s.
Keywords/Search Tags:NiO one-dimensional nanomaterial, ZnO thin film, kinetics, p-n junction, photodetector
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