The Influence Of Interface Modification And P3HT Transport Layer Optimization On Performance Of Perovskite Solar Cells

Perovskite solar cells,which have the opportunity to replace crystalline silicon solar cells,have been developing rapidly in recent years,with an efficiency of more than 25%.Facing the challenges of commercialization,perovskite solar cells still need to solve the problems of large-area manufacturing difficulties,poor illumination stability,and poor device repeatability.The work of this thesis is mainly carried out from three aspects:the passivation of the electron transport layer,the interface passivation of the perovskite and the hole transport layer,the effect of using P3HT as the transport layer on the device performance:1.By adjusting the composition of the perovskite and using additives in the perovskite layer,a process for preparing perovskite with high reproducibility in our laboratory was found.On this basis,using a mixture of PCBM and PMMA to modify Sn O₂ electronic transport layer,the interface between the Sn O₂ planar electron transport layer and the perovskite layer was effectively passivated.which significantly increased the perovskite grain size,improved the ability of electronic extraction,and the performance of all aspects of the device is greatly improved,and the prepared device has a photoelectric conversion efficiency of 20.28%.2.Methylamine sulfate is used to modify the interface between perovskite layer and hole transport layer.After the methylamine sulfate treatment,the grain boundaries of the perovskite layer surface are filled with a large number of small particles,effectively improve the hole extraction ability of Spiro-OMe TAD layer.The methylamine sulfate treatment device can greatly increase the open circuit voltage?from 1.09 V to 1.17 V?.Combining previous work,based on the passivation of Sn O₂ by PCBM:PMMA,at the same time,the interface between the perovskite and the hole transport layer was modified with methylamine sulfate,It is found that the passivation devices on both sides perfectly continue their respective advantages.Finally,the device with open circuit voltage of 1.16v,short circuit current of 22.96 m A/cm²,filling factor of 79.68%and PCE of 21.22%was obtained.3.P3HT was used instead of PTAA as the hole transport layer.In the experiment,firstly,we studied the effect of P3HT as hole transport layer on device performance stability.Secondly,by changing the P3HT film-forming substrate and changing the P3HT film-forming method to induce P3HT oriented film-forming,effectively improve the performance of P3HT devices.P3HT has great prospects as a hole transport layer,and further research is needed.This thesis includes 29 pictures,10 tables,and 60 references.