The Fabrication And Research Of A Novel Memristor Array

In recent years,the research of artificial intelligence has sprung up.But it mainly focuses on the software optimization algorithm.The development of brain like devices such as memristors lags far behind the needs of algorithms.There is an insurmountable von Neumann bottleneck in using traditional computer systems and CMOS circuits to realize artificial intelligence,therefore,the efficiency is low.To sum up,the integrated circuit based on memristor is an urgent technical problem.With the rapid development of neuromorphological computing systems,memristor devices have become a hot topic due to their good electrical properties,which can realize the function of electronic synapses.On the other hand,large scale integrated circuits require the size and construction of devices,and arrays show their potential in manufacturing process and circuit integration.Some new two-dimensional materials(such as MXenes)have shown potential advantages in improving the performance of electronic devices.At the same time,a new type of two-dimensional transition metal carbide(MXenes)shows potential advantages in improving the performance of electronic devices.This thesis focuses on the preparation and research of a new two-dimensional material memristor array,the research of artificial neural network is accelerated in the future.In this paper,the physical characterization and chemical characteristics of two-dimensional materials were studied experimentally.After that,the memristor single device based on two-dimensional materials was fabricated,and its electrical performance was measured.And then,the memristor array was fabricated.Afterwards,long-term synaptic plasticity and device reliability were studied by electrical measurement and analysis.It is worth noting that the memristor has a resistance window of 10~7 at different limiting currents,proving that the limiting current can be used to control the resistance of the memory.Under the stimulation of-0.2 V,the decrease of device conductance can be clearly observed,which is similar to the characteristic of biological forgetting.The analog behavior can be observed by memristor under the continuous scanning of positive and negative voltage.In addition,the device is similar to a biological synapse by simulating the characteristics of a bipolar analog resistance switch.The memoristor proposed in this study may offer great potential in applications of brain activation.In this paper,we have successfully fabricated a kind of memristor array based on two-dimensional materials.Firstly,we have studied the characteristics of new two-dimensional materials.Secondly,we have designed a single device and array device through physical vapor deposition and Spin-on PR Coating.Then,we have carried out a detailed analysis of its electrical performance through a variety of DC and pulse measurements.The memristor array has good memory,large resistance window and synaptic plasticity,which not only has great potential in the application of neural morphology,but also provides an effective solution for the establishment of artificial neural network with accurate and efficient learning ability.