The Study Of Antimony Sulfoselenide Thin Film Prepared By Aqueous Methods And The Performance Of The Devices

Up to now,the rapidly developing economy of society has led to an increase in energy consumption.Traditional fossil energy still dominates energy consumption,and the resulting environmental pollution and damage have attracted more and more attention.The development of new energy can effectively replace traditional fossil energy,which will not only effectively reduce environmental pollution,but also effectively alleviate the greenhouse effect and protect the scanty fossil energy.Among them,solar energy has received extensive attention on account of its inexhaustible characteristics.Solar cells as one of the most direct and effective way to convert solar energy into electrical energy has been greatly developed in recent decades.As a rising star,thin-film solar cells have produced many excellent materials after years of development.Such as indium gallium selenide?Cu?In,Ga?Se2,CIGS?,cadmium telluride?CdTe?,gallium arsenide?GaAs?have achieved power conversion efficiency over 22%and realized commercialization.However,due to the scarcity of In and Ga,and the intrinsic toxicity of Cd makes people have to seek for potential alternative ones.Among the new alternative materials,Sb₂(S_1-x,Se_x)₃?0?x?1??Sb₂?S,Se?₃?has gained a lot of attension and became one of the current research hotspots owing to its excellent properties,simple composition and abundant reserves of raw materials.For purpose of improving the performance of Sb2?S,Se?3 thin film solar cell as well as cutting down the manufacturing cost,in this paper,the Sb2?S,Se?3 solar cell with structure of TCO/buffer layer/absorber layer/back electrode was prepared by the aqueous solution methods.Meanwhile,energy band regulation,method exploration and defect suppression were carried out to make it.The main research contents are as follows:?1?Fabricating full-inorganic Sb2?S,Se?3 solar cell by chemical bath deposition.Absorber with gradient band gap was built through traditional chemical bath deposition followed by proper post-selenization treatment.And a low-cost carbon layer was introduced as hole transporting layer and electrode material.Subsequently,an average PCE of 1.58%was achieved.By optimizing the duration of selenization and the thickness of the absorber layer,the conversion efficiency of the device was finally improved to2.64%.Moreover,the performance of the device was well studied,and promising full-inorganic Sb2?S,Se?3 solar cell was successfully prepared.?2?Preparing Sb2?S,Se?3 solar cell by hydrothermal method.In order to solve the problems of the traditional CBD method and further improve the quality of Sb2?S,Se?3film so as to enhance its power conversion efficiency,a hydrothermal method was applied to prepare high quality Sb2S3 precursor film.The deposition mechanism of Sb2S3prepared by hydrothermal method was carefully studied and the selectivity to the substrate of Sb2S3 film revealed as well.A controllable gradient band gap in Sb2?S,Se?3film can be constructed by post selenization treatment.Finally,Sb2?S,Se?3 device with structure of FTO/CdS/Sb2?S,Se?3/Spiro-OmeTAD/Au obtained a champion power conversion efficiency of 6.14%,which providing an effective preparation approach for further development of Sb2?S,Se?3 solar cells..?3?Introducing TiO2/CdS double buffer layer to improve the performance of Sb2?S,Se?3 solar cell.In order to solve the problem of deficit open circuit voltage caused by the conduct band offset problem of ITO/CdS/Sb2?S,Se?3,the TiO2/CdS double buffer layer structure was formed and introduced to reduce the band gap offset at ITO/CdS interface.The reduced CBO at ITO/CdS promotes the transportation of electrons and reduces the losses.In addition,TiO2/CdS double buffer layer also has a good protection for the device by avoiding the short-circuit channels from formation.And a detailed study of its working mechanism was carried out.Finally,the device got Voc of 793mV which is61mV higher than that of the device with single CdS buffer layer,and the efficiency was improved by 20.8%.The TiO2/CdS double buffer layer was successfully applied to the Sb2?S,Se?3 solar cell and provides valuable experience for the preparation of Sb2?S,Se?3solar cell.