Preparation And Optical And Electrical Properties Of MoS₂/C₆₀ Films

As a two-dimensional material,the MoS₂ has excellent optica,electronic and mechanical properties.The C₆₀ is an excellent electronic transmission material.Based on their excellent properties,the MoS₂ and the C₆₀0 were combined.Mo films were prepared by DC magnetron sputtering method,and MoS₂ films were formed by sulfurized and annealed in S?g?atmosphere.The C₆₀ films were deposited on MoS₂films by vacuum evaporation,thus MoS₂/C₆₀ films were formed.Electrode was prepared by vacuum evaporation,thus devices with a configuration of Al/C₆₀/Al,Au/MoS₂/Au and Au/MoS₂/C₆₀/Al was formed.Three aspects as follows were studied:?1?Mo films were deposited under different sputtering powers.The thickness of Mo films was measured by the step profiler.The deposition rates of the films approximately were 0.38?/s,0.24?/s and 0.15?/s at 14.4 W,9.6 W and 4.8 W,respectively.MoS₂ films were prepared under different sulfurizing and annealing temperatures,times and different Mo films.The film was characterized by X-ray diffractometer,uv-vis spectrophotometer,Raman tester and atomic force microscope.The results show that the crystal structure of MoS₂ after sulfurizing and annealing at750?is trigonal prismatic?2H?.The crystallinity of MoS₂ is good after sulfurizing and annealing 60 minutes.The thickness of MoS₂ films could be controlled by controlling the thickness of Mo films.MoS₂ field effect transistors were prepared.Electrical measurements on MoS₂ field effect transistors revealed a p-type semiconductor behavior.?2?The MoS₂/C₆₀ film was formed.The Raman spectra and absorption properties of MoS₂/C₆₀ films were tested and characterized.When C₆₀ is deposited on the MoS₂ film,the Raman peak of C₆₀ is slightly red-shifted in comparison with that deposited on Si/SiO₂ substrate,due to van der Waals forces between C₆₀ and MoS₂.The MoS₂/C₆₀ film has good absorption properties in visible light range.?3?The heterojunction device with Au/MoS₂/C₆₀/Al structure was prepared.The heterojunction shows good rectification characteristics,and the rectification ratio is 215.The ideality factor of the device is 37.5.Through electron conduction model analysis,the transport mechanisms of the electronics include thermionic emission,space charge limited conduction?SCLC?and tunneling phenomenon.