| CdS has attracted widespread attention due to its suitable band gap width,unique optical and electrical characteristics,and good catalytic properties.This thesis is mainly divided into three parts:1.A ZnO NS thin film was prepared by a two-step chemical method.The ZnO seed layer was first prepared by the sol-gel method,and then the ZnO NS array was prepared by the hydrothermal method.Then,based on the ZnO NS array,Cd(NO3)2 and Na2S were used as cadmium and sulfur sources.CdS quantum dot was prepared by successive ionic layer adsorption and reaction.ZnO NS/CdS thin films were prepared by layer adsorption method.The effects of deposition times and impurity concentrations on the photoelectrochemical properties of ZnO NS/CdS thin films were studied.Finally,the effects of sensitization order on the photoelectrochemical properties of ZnO NS/CdS:Zn thin films were investigated.2.TiO2 NS/CdS thin film was synthesized by hydrothermal method based on TiO2NS.Using Cd(CH3COOH)2 as the cadmium source and thiourea as the sulfur source,CdS nanoparticles were prepared on a TiO2 NS array under hydrothermal conditions at 160°C.The influence of hydrothermal reaction time on the photoelectric properties of TiO2NS/CdS thin film was discussed by changing the hydrothermal reaction time.The optimal reaction time was selected.Cu was doped with different concentrations of CdS,and TiO2NS/CdS:Cu was doped with different concentrations.The photoelectrochemical properties of the composite films were studied.3.Co-sensitized TiO2 NS withα-Fe2O3 and CdS were based on TiO2 NS,α-Fe2O3nanothorn structure was prepared by hydrothermal method,and prepared CdS quantum dots by successive ionic layer adsorption and reaction.The effect of co-sensitization order on TiO2 NS was studied. |