Study On Resistive Storage And Neuro-Synaptic Behaviors Based On MoS₂ And Ti₃C₂

Memristor has the potential to solve shortcomings of Von-Neumann structures in traditional computers.However,with the development of memristor,there have some obstacles in the field of low power consumption and high speed.Therefore,people need to explore new material memristor and further improve the memristor performance.Recent years,two-demonstional(2D)materlas gradually become the promising candidate of functional layer due to its semiconductor properties.However,owing to the complex physical mechanisms,the 2D memristor can not to further practical application.This experiment mainly study the high performance memristor based MoS2 and Ti3C2 and simulates the basic performance of resistive memory and synaptic bionic device,finally study the physical mechanism of resistive switching in detailFirstly,a low toxicity pure 2H MoS2 nanosheets were presented and used as the functional layer of Ag/MoS2/Pt memristor.Under the direct sweeping voltage test,the memristor has good endurance and 105 s retention time under different operation current When the input current compliance as low as 100 nA,this device also shows bipolar resistance switching behavior and the SET power consumption is reduced to 7.35 nW.Under the pulse operation model,the SET delay time of Ag/MoS2/Pt memristor is lower than 12 ns and the resistance of the Ag/MoS2/Pt device can be bidirectional modulated over a wide range(pulse number>500)with an approximately linear trend.Furthermore,the accuracy of pattern recognition with handwritten data can reach 90.37%.This work provides a novel preparation method for the application of MoS2 nanosheets to resistive storage and artificial neural synaptic devicesSecondly,a new memristor with Al/Ti3C2/Pt was prepared by using Ti3Cw instead of the conventional resistance material.Under the direct current voltage sweeping,the Al/Ti3Cw/Pt memristor shows reversible bipolar resistance switching behavior and excellent electronic performance.Under the pulse sequence,the resistance of Al/Ti3Cw/Pt memristor can be modulated by a series of 10 ns pulse duration waveform,which is helpful for 2D memristor used in the ultra-fast speed pulse modulation.On the basis of 10 ns pulse duration,this device can achieve the STP-LTP in nanosecond scale.This experiments also analysis the physics mechanism in the resistance switching processes of Al/Ti3C2/Pt memristor.The Ti vacancy and O vacancy in the Ti3C2 functional layer play an important role for the resistive switching processesIn the third experiment,the Ag nanoparticles were dopant in Ti3C2 and construct the Al/Ti3C2:Ag/Pt device.This method is not only overcomes the current abrupt behavior of pure Ti3C2 devices,but also realizes the bidirectional continuous current transition in switching processes.And we systematically study the variation trend of excitatory postsynaptic current EPSC with different pulse condition,which was verified the behavior of the device from STP to LTP Interestingly,the resistive switching characteristics of Al/Ti3C2:Ag/Pt device exhibits continuous properties both at positive and negative voltage stimuli,thus has ability to achieve the basic decimal arithmetic operations.