Research On CVD Graphene And Its Applications In Photonic Devices

The emergence of graphene has triggered a research boom in two-dimensional materials.At present,graphene has been found to have the highest performance in many fields and is considered to be a revolutionary material in the future.In the field of optoelectronic devices,graphene has excellent optical and electrical properties such as ultra-high carrier mobility,adjustable conductivity and extremely high transmittance,which make it have great development potential and application prospects.From the practical perspective,this paper has selected large-area graphene prepared by chemical vapor deposition(CVD)method compatible with semiconductor technology,and have carried out its application research in terahertz detectors and micro-LED(especially the micro-LED is heavy).This paper was completed with the support of the National Key R&D Program of China(No:2017YFB0403100,2017YFB0403102).The main research work are as follows:(1)Designed and prepared graphene terahertz detector based on bow-tie antenna integrated and determined the key parameters of the device,such as electrode shape and size,channel spacing,graphene size,gate oxide thickness,etc.The gate oxide material was selected and optimized the electrode stripping process.(2)The frequency of the device with the highest coupling efficiency was investigated.The field effect of GFET was tested,and the photoresponse of graphene terahertz detector was tested at room temperature and low temperature.(3)For the first time,it was proposed to integrate GaN-based micro-LED and GFET driving circuits into the same substrate to avoid the large-scale transfer problem of current micro-LEDs.Designed and fabricated monolithic integrated device of GaN micro-LED with graphene transparent electrode and graphene active-matrix driving transistor.Determined the key parameters of the device,such as the size of the microLED,the size of the graphene,the channel spacing of the GFET,the electrode area,the shape of the gate oxide and the isolation layer and investigated the process conditions and materials required for the device fabrication.(4)The micro-LED/GFET monolithic integrated devices were tested separately and integrated respectively.Investigated the output characteristics and transfer characteristics of the GFET,the I-V characteristics of the micro-LED and the current expansion.Explore the ability of GFET to regulate micro-LED.