The Research Of Preparation And Photoeletric Properties Of Antimony Selenide Nanowires

Antimony selenide（Sb₂Se₃）nanomaterials,with excellent physical and chemical properties,such as direct band gap,suitable band gap,high optical absorption coefficient,low toxicity and low cost,have important application prospect in the field of efficient visible light detection.However,the very low electrical conductivity of the bulk Sb₂Se₃ limited its photoelectric properties,especially the responsivity is relatively low.The one-dimensional nanocrystallization of Sb₂Se₃ has been proved to be an effective way to improve its photoelectric properties.However,how to use a simple method to prepare one-dimensional Sb₂Se₃ nanomaterials to achieve effective control of its size,clear the relationship between the photoelectric properties and the size and how to further improve the responsivity of Sb₂Se₃ nanowires still needs further study.Firstly,in this paper,through the hot-injection method using polylol alcohol as raction solvent,prue phase Sb₂Se₃ nanowires with controllable size were prepared by changing the injection speeds and the precursor concentrations.The relationship between the photoelectric properties and size of Sb₂Se₃ nanowires was studied.And the regular pattern between the photoelectric properties with the size of nanowires was obtained,and its performance change was analyzed.Secondly,in order to further improve the photoelectric properties of the Sb₂Se₃nanowires,CH3NH3PbI3/Sb2Se3 heterojunction nanowires were prepared by a two-step spin coating process.The photoelectric properties and optical absorption of the Sb₂Se₃ nanowires before and after the heterojunction formation in the visible light range were studied.The results showed that the response of heterojunction CH₃NH₃PbI₃/Sb₂Se₃ nanowires in the range of visible light was significantly improved,the switching ratio increased from 17 to 34,the responsivity was increased by 40%,and the mechanism of light response enhancement was discussed.