Preparation Of NaY?WO₄?₂ Film And Study On Its Fluorescence Properties

As a photoelectric functional material,tungstate is widely used in various fields,such as laser devices,medical detection,photocatalysis,etc.Thin film has higher resolution than its powder.Therefore,thin film material has become the direction of device optimization development and is one of the core elements of modern information technology.When combined with the device,it becomes the core foundation of technologies such as electronics,information,sensors,optics,and solar energy.We selected NaY?WO₄?₂ thin films and two different concentrations of Re(Re=Eu³⁺,Tb³⁺)doped NaY?WO₄?₂ thin films on two different substrates by dipping and pulling method.Prepare NaY?WO₄?₂ precursor solution,and use dip-pull method to coat the quartz substrate and FTO substrate respectively,explore the best preparation conditions of NaY?WO₄?₂ thin film,and prepare different doping concentration Re:NaY?WO₄?₂(Re=Eu³⁺,Tb³⁺)film.with the help of a variety of modern testing methods,to explore the influence of different substrates,controllable experimental conditions and doping concentration on the optical properties of the film structure,morphology,stress,ultraviolet and fluorescence The main work results are as follows:1.That the density of quartz glass-based film is higher when the temperature is850?,?004?The?008?crystal plane is preferentially grown;when the number of coating layers is 14,CTAB and SDBS surfactants are alternately coated or SiO₂ and ZnO are used as buffer layers.The density and crystallinity of the film are improved and the distribution is more uniform.When the number of coating layers is 14 and the heat treatment temperature is 550?,the density of FTO conductive glass NaY?WO₄?₂film is improved a,The crystallinity of NaY?WO₄?₂ film increased from 82.94%to87.35%;when pH=3,The crystallinity of the crystal increased from 80.75%to87.35%and the grain The size reaches about 125 nm.2.Analyze the effect of Eu³⁺doping on the morphology and structure of NaY?WO₄?₂ film.With the increase of Eu³⁺doping concentration,the interplanar spacing decreases,and the internal stress of FTO based film gradually decreases from tensile stress to compressive stress.With the increase of Eu³⁺doping concentration,the transmission spectrum of Eu³⁺:NaY?WO₄?₂ shifts blue,and Eu³⁺doping reduces the optical band gap of NaY?WO₄?₂ film.When the Eu³⁺doping concentration is from5%to 20%,the fluorescence intensity of the film gradually increases,and the Eu³⁺doping concentration is 30%.Due to the fluorescence quenching effect,the fluorescence intensity decreases.The Tb³⁺doping concentration increased from 5%to15%,and the fluorescence intensity of the film gradually increased.3.The growth model of NaY?WO₄?₂ thin film on the quartz substrate is:island growth model.The growth model of NaY?WO₄?₂ thin film on FTO substrate is:layered growth model.After introducing the SiO₂,NYW and ZnO buffer layers on the quartz glass substrate,the NYW film is plated,and the?004?crystal plane has a clear preferred orientation.The crystal quality of the NYW film is improved,and the SiO₂buffer layer has the best density improvement effect.