Study On The Interface Characteristics Of NiGe By Ti Interlayer Mediation

With the use of various types of integrated circuits and their increasing integration,transistors of unit size have become smaller,and the physical limits of silicon materials have shown.The short channel effect severely limits the further development of transistor performance.At present,scientists have found new semiconductor materials,such as germanium and germanium tinwhich have high carriers' mobility.Howeber,there are still all kinds of difficulties in the application of germanium and germanium tin materials.For example the contact between Ge and metals is an important problem of future research.In this work,Ti was used as insertion layer to mediate Ni/Ge reaction between nickel and Ge,and the effect of Pt or Al insertion layers on Ni/Ge or Ni/Si reaction is also studied.In the experiment,different ultra-thin insertion layer metals were grown on germanium substrate by chemical vapor deposition system,and then nickel layers were deposited.The formation of NiGe compounds was modified by different metal insertion layers on Ge.Finally,uniform NiGe thin films can be obtained and the interface between NiGe and Ge substrate is very smooth.The prepared NiGe thin films were characterized by Raman measurement,scanning electron microscope,atomic force microscope,transmission electron microscope,energy spectrum analysis and so on.Moreover,it was found that when the annealing temperature was 400?,the NiGe thin film with high quality and high thermal stability was successfully obtained in the case of 1nm Ti interlayer.The1 nm titanium interlayer cansuccessfully modulate to form an epitaxial Nickel Germanium thin film.At 400? the uniform structure,thermal stability and stable electrical properties of the Nickel Germanium thin film are formed during the experiment.When the thermal annealing temperature increases,the thermal stability of the experimental sample film begins to become worse and the quality decreases.The optimum conditions for the preparation of Nickel Germanium oxide films were studied bycomparing the metal-platinum insertion layer with the metal-titanium insertion layer.