Preparation And Properties Study Of ZnO/Sb₂Se₃ Heterojunction Thin Film Solar Cells

Sb₂Se₃ thin films with different thickness were deposited on the glass and quartz substrat es deposited at different temperatures by vacuum thermal evaporation method using Sb₂Se₃ p-owder as the evaporation source.By analyzing the structure and photoelectric properties of Sb₂Se₃ films,it was shown that the preferred orientation of the films is<221>orientation under deposition temperature of 290℃,which have strong optical absorption ability and good electrical conductivity.ZnO thin films with different thicknesses were prepared at different deposition temperatu-res by spray pyrolysis method using zinc nitrate solution as the precursor solution.The struct-ure and optical properties of ZnO thin films were measured and analyzed.When the deposition temperature was 310°C,the prepared film has three main crystal orientations,which are<100>,<002>,and<101>,respectively,and the crystallite size is large and has good optical properties.ZnO/Sb₂Se₃ heterojunction thin-film solar cells were fabricated on ZnO thin films prepared under different conditions using FTO glass as substrate.Sb₂Se₃ thin films with thick-ness of 580 nm deposited at 290℃were used as the light absorbing layer.The effect of deposition temperature and thickness of ZnO buffer layers on solar cells efficiency was studied.The effect of temperature and film thickness on the photovoltaic performance of solar cells was investigated.It was shown that the photoelectric conversion efficiency of ZnO/Sb₂Se₃ heterojunction thin film solar cells is 0.72%,as the deposition temperature of the ZnO thin film was 310℃and the thickness was 130 nm.ZnO/Sb₂Se₃ heterojunction thin film solar cells was fabricated on FTO glass substrates.ZnO thin films with thickness of 130 nm prepared at 310°C and Sb₂Se₃ thin films deposited under different process conditions were used as buffer layers and light absorbing layer,respectively.The effect of temperature and film thickness on the photovoltaic performance of solar cells was investigated.The optimum photoelectric conversion efficiency（0.76%）was obtained when the thickness of Sb₂Se₃ thin film was 580 nm and deposition temperature was 290℃.