Performance Of Polymer Solar Cells Using Vapor Phase Polymerized PEDOT As Hole Transport Layer

Polymer solar cells become one of the hot spots due to their merits of simple structure,light weight,facile molecular-engineering tailorabilty and other advantages.In polymer solar cells,interface buffer layer can effectively reduce the series resistance,speed up electon or hole transport,raise the collection efficiency at the corresponding electrodes and reduce electron-hole recombination by providing fast and selective charge transfer.Therefore,the excellent interface buffer layer can greatly enhance the overall performance of the devices.In this thesis,we used P3HT:PC₆₁BM as active layer to explore and optimize the preparation process of polymer solar cells.On this basis,the PEDOT films were prepared by vapor phase polymerization,and the preparation process was optimized.The smooth,homogeneous PEDOT films were prepared as hole transport layer,and the devices achieved better energy conversion efficiency than those used commercialized PEDOT:PSS as hole transport layer.The main contents are as follows:?1?The preparation process of standard device of polymer solar cells based on P3TH:PC₆₁BM system was explored.The effects of the spin-coating speed of PEDOT:PSS solution,the annealing temperature and time of the active layer on the device performance were investigated.When the spin-coating speed of PEDOT:PSS solution is 3500 rpm,the annealing temperature of active layer is150oC and the annealing time of active layer is 10 minutes,the devices have the best performance,with V_oc is 0.571 V,J_sc is 6.35 mA·cm^-2,FF is 0.53 and PCE is 2.17%.?2?The PEDOT films were prepared by vapor phase polymerization to replace expensive PEDOT:PSS as hole transport layer of polymer solar cells.The effects of the concentration and the spin-coating speed of iron?III?p-toluenesulfonate oxidant,the temperature and time of vapor phase polymerization on the device performance were investigated.When the concentration of oxidant is 6wt%,the spin-coating speed of oxidant is 3500 rpm,the temperature of vapor phase polymerization is 50oC and the time of vapor phase polymerization is 60 minutes,the devices have the best performance,with V_oc is 0.473 V,J_sc is 12.83 mA·cm^-2,FF is 0.44 and PCE is 2.84%,higher than the PCE of the standard devices?2.45%?.