Simulation And Optimization Of The Double Sided HIT Solar Cell

The double-sided HIT solar cell on the p-type substrate has two HIT layers,so that it forms two electric fields with the same direction,and the existence of the intrinsic layer between two HIT layers can well reduce the inter-layers Interface density and improve the efficiency of battery conversion.So the double-sided HIT solar cell has important research significance and application prospects.In this paper,the overall performance and various layers of double-sided HIT solar cells were firstly simulated and optimized by the AFORS-HET software.The effect of the back-field band gap and doping concentration on the battery and their mutual relations in the double-sided HIT solar cell were innovatively analyzed,and the effect of the doping mode of the emitter layer on the battery was studied.The specific content is as follows:Firstly,the structure of double-sided HIT solar cell was simulated and it was compared with that of other structures.In comparison,the overall performance of the a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/pm-Si(p+)solar cell is higher.This is because there are two batteries in the double-sided HIT solar cell and the two intrinsic layers can reduce the interface state density between the individual layers and improve the battery performance.Secondly,the a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/pm-Si(p+)solar cell is simulated and optimized for the a-Si(n)emission layer.The simulation results show that the battery performance decreases with the thickness of the layer,increases with the increase of the doping concentration,and remains unchanged;the doping modes of the a-Si(n)layer are gradient doping and uniform doping.In the case of impurity,the conversion efficiency of gradient doping is higher than that of uniform doping when the doping amount is constant,and the conversion efficiency of the battery is maintained after increasing with the increase of the concentration ratio between the number of doped layers and the number of layers.Simulation of intrinsic layer a-Si(i)of double-sided HIT solar cell again optimization.The results show that:The addition of the intrinsic layer a-Si(i)can effectively improve the battery performance,battery performance decreases with increasing a-Si(i)thickness and with the increase of the band gap of a-Si(i),the increase remains unchanged.Finally,the back-channel pm-Si(p+)of double-sided HIT solar cells was simulated and optimized.The simulation results show that the addition of pm-Si(p+)in back-field can effectively improve the battery performance.Under the same back-field band gap,the conversion efficiency increases gradually with the increase of doping concentration.At a certain doping concentration,the conversion efficiency increases gradually with the increase of the back-field band gap.At low concentrations,the performance of solar cells increases with increasing band gap;at high concentrations,band gap has little effect on the performance of solar cells.