Improvement Of Preparation Technology Of Perovskite Films And Perovskite Device Performance Research

With the improvement of people’s living standards and the rapid development of the national economy,the use of traditional fossil fuels is increasingly difficult to meet people’s daily needs.Solar energy,as a resource-rich,widely distributed clean energy,has great potential for development and utilization.To improve the efficiency of solar energy utilization,the development and utilization of new solar cells have received extensive attention.As a kind of third-generation solar cells,perovskite solar cells(PSCs)have the advantages of wide source of raw materials,low energy consumption and solution preparation.Perovskite film quality directly determines the performance of the entire device.Therefore,how to improve the quality of the perovskite film by optimizing the fabrication process and regulating the perovskite composition is crucial for improving the performance of the perovskite solar cell.This article mainly studies the perovskite layer as follows:(1)A high-performance electron transport layer(ETL)-free planar fluorine-doped tin oxide(FTO)/perovskite/hole-transport material/Au solar cell was prepared.The plasma cleaning can effectively remove the oil stains and small organic molecules on the FTO substrate surface,improve the interface between the perovskite layer and the FTO substrate,reduce the defects at the interface,enhance ability to extract electrons of the FTO substrate,and avoid the accumulation of electrons in the FTO and perovskite interface.Reduces the recombination of electrons and holes.Through the plasma cleaning method,the interface contact of the device was improved,and photoelectric conversion efficiency of 15.42% was obtained.(2)The influence of different pressure conditions on the film quality of perovskite was explored.The boiling point of the substance decreases as the pressure decreases,so when the pressure is low enough,the solution can quickly evaporate at room temperature.Through different pressures,the evaporation rate is controlled to produce a uniform and dense perovskite film.Subsequently,the influence of different annealing temperatures on device performance was explored.High-temperature annealing was used to shorten the annealing time and shorten the preparation cycle of perovskite films.A preparation process of perovskite thin film combined with low-pressure flash evaporation and high-temperature annealing was proposed,and the power conversion efficiency of 19.15% was obtained.By optimizing the preparation process of the perovskite film,the use of toxic anti-solvents(chlorobenzene,ethyl ether)is avoided,and the preparation period of the perovskite film is greatly shortened.At the same time,the preparation of the entire perovskite film can be completed in the air,which has great commercial prospects.(3)Through the introduction of a certain amount of additive KSCN,the perovskite crystallinity can be improved,the grain size can be increased,the grain boundary in the film can be reduced,the light absorption intensity of the perovskite film can be increased,defects can be reduced,and electrons and holes can be reduced.The compound.With the addition of 12 mM additive KSCN,under the reverse scanning conditions,the device achieved a power conversion efficiency of over 19.23%,and the forward scanning power conversion efficiency also reached 18.82%,which greatly reduced the hysteresis effect of the entire device.A high-performance and hysteresisfree perovskite solar cell was prepared,which solved the hysteresis problem that has long plagued the commercial development of perovskite.