The Design Of High Power Insulated Gate Bipolar Transistor(IGBT) Protection

Insulated gate bipolar transistor IGBT is the core device of current inverter;it is widely used in the new energy field especially in wind power field.Reliability and safely of IGBT is very important to the stability of the entire system and economic benefits.So it is very necessary to do some search about application and IGBT driver especially the technology of driving protection.This paper analyzes the IGBT device structure,working principle and characteristics,then summarize the requirements IGBT driver and the protection circuits.According to the high power requirement of converter,IGBT parallel operation was used,and analyzes the influence of parallel module driving resistance,driving capacitance and stray inductance on IGBT performance,and the appropriate driving parameters were selected.In this paper,the driving card was locked on IGBT to reduce the stray inductance.Furthermore,the balance of the resistance and inductance of the shunt branch and the effect of synchronous performance of driving signal on current sharing of parallel are discussed as well.We came to the conclusion that the symmetrical circuit design and the complementary bus bars could meet the requirements of the current sharing.This paper gives a reasonable solution to some challenging common problems in design of and IGBT inverter.In the face of this situation,this paper analyzes the limit working conditions of 1.5MW converter.And provide protection programs of over-current,over-voltage,temperature detecting,and driver protection.It is proved that the design program is feasible by experiment.