Preparation Of Inverted Perovskite Solar Cells Based On CuPc Hole Transport Layer

Perovskite solar cells have become one of the most popular research topics in the field of photovoltaics in recent years due to their high efficiency,low cost and easy processing,the power conversion efficiency has also rapidly increased from the initial 3.8% to latest certified 24.2%.Such highly efficiency is inseparable from the traditional high-temperature process,which also limits the application on flexible substrates.so the low temperature processed inverted p-i-n perovskite solar cells provide an appropriate strategy to this problem.In order to ensure the high efficiency of inverted perovskite solar cells,it is important to select a hole transport layer with suitable energy level,high conductivity and high stability.In this thesis,the inverted perovskite solar cell was taken as the research object,and the typical p-type semiconductor material copper phthalocyanine（CuPc） was introduced as the hole transport layer to carry out its preparation and performance research.The main contents are as follows:（1）Dopant-free CuPc material was introduced as the hole transport layer,and a full low-temperature processing method for the inverted perovskite solar cell based on CuPc was proposed.The test results showed that the CuPc film obtained by thermal evaporation deposition was uniform and compact,exhibited good flatness and coverage,which can form good interfacial contact with the perovskite light absorbing layer,and also effectively extract and transport photo-generated carriers.When the thickness of the CuPc was 10 nm,the device achieved 15.37% power conversion efficiency on the ITO rigid substrate,the J-V characteristics curve measured under both the reverse and forward scan directions were basically coincident,with negligible hysteresis effect,and the device maintained good stability in the air environment.（2）A solvent-assisted annealing method was introduced in the preparation of perovskite light absorbing layer,the DMF vapor was adding during the baking process to improve the quality of the perovskite film.It was found that the key performance parameters of the device were all improved,the power conversion efficiency also increased to 15.69%.Further,PCBM and C₆₀ were used as electron transport layers to fabricate perovskite solar cells.The results showed that the comprehensive performance of C₆₀-based device was better than that of the PCBM-based ones,and the highest power conversion efficiency of 16.49% was obtained.（3）A flexible perovskite solar cell based on PET-ITO was prepared,the flexible device of PCBM electron transport material obtained 12.66% power conversion efficiency,while the flexible device of C₆₀ electron transport material obtained the highest power conversion efficiency of 12.93%.Under the mechanical stability test conditions of 5 mm bending radius and 3000 bending cycles,the power conversion efficiency of PCBM and C₆₀ flexible perovskite solar cells maintained 81.8%and 79.0% of their original efficiency,both showed excellent bending stability.