Research On Parasitic Parameter Of Gate Drivers Based On SiC MOSFET Power Module

With the development of power system and the establishment of the smart grid,the research and application of power electrons equipments has placed a key role of new generation electric power technology.And the power swiching components has become important to power electronis technology.As the hard core of the power convertor,the power swiching largely determinds the level of development of power electronis equipments.Currently,the power swiching like MOSFET,IGBT based on Silicon has been widely used.But its development foreground has been limited.The Silicon semiconductors has the lower operating voltage and higher Rdson,which leads to the higher swiching losses.Besides,the wide of band-gap and the coefficient of themal conductivity of the Si semiconductors is low,which limits the maxium of power and operation temperature.Therefore,the third generation semiconductor devices such as SiC and GaN have attraced more and more attentions.The SiC has the higher level of voltage and power,which becomes the advantages in application in high voltage and high power situation.As a wide band-gap semiconductor,the SiC has the tripled band-gap wide than Si,the 10 times higher breakdown field strength,and the 2.5 higher themal conductivity.The high breakdown voltage,high themal conductivity and the high swiching frequence make the SiC MOSFETs fast developed and widely commercial applicated.Nowadays,the research on SiC MOSFET are concentrated on the establishment of the models and the test of functions.The attentionon to the SiC MOSFET gate drivers model and the influence by parasitic parameters is not adequate.The article summarizes the existing researches on gate driver parasitic parameters and establishes a model of SiC MOSFET gate drivers,completes the simulatians of gate drivers,and analyzes the influences of the parasitic parameters to the drive performance.On the basis,the article proposed two gate drivers plan for 1200V/120 A SiC MOSFET power modules.The performance is tested in the experiments.