Study On The Process Optimization And Photoelectric Performance Of Perovskite Solar Cell Hole Transport Layer

Perovskite materials have excellent photoelectric conversion performance,such as wide absorption band of sunlight,low exciton binding energy and bipolar transmission,which makes perovskite solar cells develop rapidly.Currently,the highest certification efficiency of devices has reached 25.2%.In perovskite battery preparation technology,the function of perovskite layer in taking one step method,will exist in the perovskite or unsaturated metal halide ions and other defects,these defects will lead to interface trap,resulting in a decline in the performance of the device,in order to solve this problem,the interface between the interface of the interface between optimization and the charge transfer research has become very important.The preparation of inverted perovskite solar cells was investigated in this paper.Based on the structure of ITO/Hole transport layer/MAPbI3/PCBM/Ag device,the effects of hole transport layer on the device and the interface are studied.Firstly,the effect of the time of titration of the anti-solvent on the crystallization of MAPbI3 functional layer and the effect of the thickness of PCBM layer on the photoelectric conversion efficiency of the device were investigated.Secondly,the influence of the thickness of GO as substrate on the morphology and photoelectric properties of CH3NH3PbI3 films was explored.Finally,the influence of the thickness of WS2 on the morphology and photoelectric properties of CH3NH3PbI3 films was studied.The charge transfer at the interface between GO/CH3NH3PbI3 and WS2/CH3NH3PbI3 was compared from the perspectives of energy level matching,PL spectral intensity and grain growth.Research shows that:When the perovskite functional layer was prepared by one-step spinning coating method,the perovskite film with the most flat surface,no void,obvious grain boundary,good grain growth and efficiency of 6.93%were obtained by adding 300 livl anti-solvent at the 9th second at 3000 r.p.m.;Secondly,the grain size of perovskite films prepared on the GO substrate corresponding to the concentration of 0.25mg/ml dispersion solution was the largest and most uniform in the experiment,with the maximum size of 900nm,and the grain boundary on the film surface was obviously flat and dense.The corresponding solar cells had the best photoelectric performance,with VOC value of 0.978 V,Jsc value of 19.92 mA/cm2,FF value of 0.45,and PCE value of 8.69%.When the sputtering power was 3 Pa,the perovskite solar cell prepared on the corresponding WS2 substrate had the best photoelectric performance,with VOC of 0.99 V,Jsc of 20.81 mA/cm2,FF of 0.32,and PCE of 5.70%.Finally,when GO and WS2 are used as substrates respectively,the growth of CH3NH3PbI3 grains is mainly affected,resulting in different non-radiative compounding at the grain boundary of perovskite,thus changing the charge transfer at the interface.