Process Development Of TSV Interposer For RF MEMS Devices

With the development of microelectronics packaging technology to the high integration,high-performance direction,TSV interposer has become one of the most effective packaging technology.For three-dimensional integration technology,TSV interposer is a competitive carrier for integrating varieties of digital chips,analog chips,RF devices,memory IC,MEMS and micro/nano sensors.RF apllication has become one of the important field for TSV interposer technology.Design optimization of RF TSV structure with low loss and low stress,process and applications become the main direction.In this paper,based on the technical requirements of the project demonstration samples,the design and process development of high resistance silicon TSV interposer were carried out for the RF frontend module.The preliminary thermodynamic properties were analyzed.Thermal stress theory and fatigue theory were used to design and analyze the RF TSV interposer,and the design of high resistance silicon RF TSV interconnection structure was specified.A process were proposerd and optimized with experiments results..Fabricated TSV interposer ware charicterized during the assembly flow with test PCB board and test chips by simulation results in terms of residue stress.