| With the booming of the information industry,the demand for low cost,low power consumption,high data transfer rates,and high density of the integrated circuits continues to increase.In order to achieve higher data rates and larger bandwidth wireless applications,a great deal of circuit research has focused on the millimeter wave.Constant iterations of CMOS technology have promoted the circuit to work in the millimeter wave band.Emerging millimeter-wave wireless commercial applications such as 5G millimeter wave communications,automotive radar(77 GHz)and millimeter wave imaging systems(94 GHz)bring new challenges to circuit system design: With the development of CMOS technology,the thickness of the metal Interconnections is getting thinner and thinner,and it is closer to the substrate,which seriously affects the performance of on-chip active devices and passive devices.Therefore,it's necessary to design millimeter-wave on-chip components and circuits reasonably to adapt to wireless communication standards.Based on the CMOS 65 nm process,this article focuses on the research of on-chip antennas and low-noise amplifiers.The main research work and innovations of this paper are as follows:(1)In this paper,the application of artificial magnetic conductor(AMC)has been studied.We design two novel AMC structures,which are Hilbert-curve type artificial magnetic conductor structure and spiral interweave type artificial magnetic conductor structure.The proposed AMC has been verified by simulation that the reflection phase of the designed AMC in the entire E-band is between-π/2 and π/2.(2)Applying the proposed AMC structure to the optimized design of the on-chip antenna,and two novel antennas were completed which are the Yagi-Uda antenna based on the Hilbert-curve type artificial magnetic conductor and the E-band on-chip antenna loaded intertwined artificial magnetic conductor.Through the electromagnetic simulation of the on-chip antenna loaded and not loaded with AMC,it is verified that the on-chip antenna has higher gain and better radiation efficiency after loading AMC.(3)By introducing electromagnetic sidewalls into on-chip inductors,transformers,and coplanar waveguide transmission lines required for low-noise amplifier design,the quality factor of on-chip passive devices is improved.In addition,the coplanar waveguides also use Patterned Ground Shields to reduce losses.The low-noise amplifier uses a three-stage cascode topology with transformer feedback input matching and T-type inductor output matching to broaden the frequency band.In addition,LNA uses transformer-coupled gm-boosting techniques to achieve a flat gain response over a wide bandwidth.Simulation results show that the amplifier has a gain of 17.5 dB at 75 GHz,an optimum noise figure of 5.7 dB,and a 3 dB bandwidth of 21.5 GHz. |