| The technology for sensing magnetic fields has also evolved driven by the need for improved sensitivity,smaller size,and compatibility with electronic systems.Thin-film magnetoresistive sensors have an important position in applications such as electronic compass,magnetic field measurement,and magnetic random access memory due to their high sensitivity and resolution.In this paper,the electric field control of magnetoresistive sensors based on stress mechanism is studied from the standpoint of theory,simulation and experiment.In this paper,the control of uniaxial magnetic anisotropy in the Multiferromagnetic heterojunction of piezoelectric material and magnetostrictive material was discussed theoretically.Then,the design principle of AMR sensor and its transmission are discussed from in view point of energy.The relationship between its performance and the uniaxial anisotropic properties.Finally,we discussed the theoretical calculation method of the GMR resistance of the spin valve and the design principle of the Wheatstone bridge sensor.It was found that the electric field can linearly control the uniaxial anisotropy of the magnetic thin film under the stress mechanism,and the uniaxial anisotropy of the magnetic film can play a decisive role in the performance of the AMR and GMR sensors.We have theoretically analyzed and predicted that the linear range and sensitivity of magnetoresistive sensors are possibly controlled by electric field.In order to verify the theoretical analysis and prediction results,we use the micromagnetic simulation software OOMMF and the matrix calculation software Matlab to establish the simulation model of the Wheatstone-bridge GMR sensor,and analyze the manipulation of its sensing characteristics via electric field.we simulated magnetic dynamics of spin valve units with different anisotropy constants and calculated the output characteristics of bridge sensor.We found that the control of the magnetoresistive sensors magnetic field measurement range,sensitivity and linearity can be achieved by applying an electric field.Inspired by the simulation calculation,we carried out the experimental study of the electric-field control of AMR sensor.Firstly,we deposited the FeCoSiB thin film on the piezoelectric substrate PMN-PT by microelectronic process,and verified that the electric field control of mechanism to FeCoSiB / PMN-PT structure is the stress mechanism.Then,the effect of electric field on the output response of FeCoSiB thin film and Barber-pole AMR sensor was successfully tested by magnetoresistance automatic test platform.As a result of the stress mechanism,the in-plane uniaxial anisotropy induced by the electric field in the magnetic film improves the linear measurement range,sensitivity and linearity of the sensor,and the control of the magnetic field linear measurement range is the most obvious.We validate the effect of the electric field on the linear measurement range of the magnetoresistive sensor from the simulation calculation and the experiment,which will effectively widen the application range of the magnetoresistive sensor. |
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