Study On Large Capacity And High Performance Organic Nanocrystal Field Effect Transistor Memory

Massive information computing,storage,transmission,and application are becoming the distinctive features of the development of information technology in the 21st century.With the iteration of information electronics,silicon-based CMOS technology has reached a 7 nm technology node,which reach the limit of device performance.As the physical size of the device reduce,due to the quantum tunneling effect and crosstalk from nearby memory cells lead to reduce device performance and high processing cost make mass producting impossible.Extensive research on stretchable organic semiconductor materials is considered to be the most promising application direction comparable to inorganic materials as a new form of electronics.However,Organic nonvolatile field effect transistor memory becomes a feasible scheme for developing new type of memory,which easy to integrate with logical circuit,non destructive reading,flexible substrate integration.While massive data processing and storage require the development of large capacity,high speed,high density OFET memory,researchers are committed to developing large capacity and high-performance airport effect transistor memory,but the storage capacity and storage stability of the devices need to be improved to meet the requirements of high speed and accurate addressing.Small molecular materials have attracted much attention due to their clear molecular structure,easy purification and directional design.This paper studied from three aspects:（1）selection of materials for charge storage layer;（2）regulation of storage interface;（3）optimization of device fabrication process.The research results provide a new solution for the realization of high capacity and high performance organic nanocrystalline field-effect transistor memories.The main research contents are as follows:Firstly,a series of different organic small molecular materials with good solubility and film forming side chain groups are selected as the storage units of OFET,and the effect of side chain group effect on storage performance is explored.The insulating polymer PS material was selected for interfacial modification,and then a thin layer of small molecular material was evaporated as the charge trapping layer to achieve high performance charge storage.Secondly,in order to further improve the stability of the data storage caused by the charge leakage,we have proposed the successful preparation of organic nanoscale arrays by the phase separation process based on the polymer nanodomain effect.the device exhibits signifcant improvements in memory performance including larger memory window（⁶0V）.After storage maintenance time test of 10⁴ s,the switch ratio(I_ON/I_OFF)is kept at 10⁵ almost without charge leakage.Finally,in order to further improve the storage density of large capacity holes and electronic storage,the scheme of p and n semiconductor material doping is designed by the energy level theory.By turning the dual component and three component doping,the high performance and large capacity bipolar storage is realized.the storage window of 114V is implemented.