Research And Design Of Millimeter Wave Power Amplifier

In recent years,radio frequency communication technology has developed rapidly,the radio frequency communication system puts higher requirements on channel capacity,and utilization of the low frequency band in the spectrum is close to saturation,which makes the millimeter wave integrated circuit develop rapidly.The RF Power Amplifier(PA)is located at the back end of the RF transmitter and is an important part of the RF communication system,and it has a vital impact on the entire RF transceiver system.Firstly,this thesis introduces the research background and significance of millimeter wave power amplifier,and briefly describes the domestic and foreign research status of millimeter wave power amplifier in recent years,then it introduces the basic theory of power amplifier.Finally,two power amplifiers with center frequencies of 35GHz and 65GHz were designed based on the 0.13μm SiGe BiCMOS process.The main work of this thesis is as follows:(1)This thesis studies the power amplifier with high output power.A two-way synthesis design method was used to increase the output power of the power amplifier.A 35GHz AB class power amplifier with high output power was designed based on the 0.13μm SiGe BiCMOS process.The overall circuit uses a two-way synthetic pseudo-differential circuit structure,the input stage power distribution and the output stage power synthesis are all performed using the Wilkinson power divider.Each branch is composed of two stages of circuits,the drive stage circuit adopts a common source structure,and the power stage circuit adopts a Cascode structure.The matching network of the circuit consists of transmission lines and capacitors to ensure that the signals can be transmitted efficiently.Its power supply voltage is 1.8V and 3.3V,and the total power consumption is 1W.The overall circuit simulation result is obtained at the center frequency of 35GHz:out:put IdB compression point OP1dB=22.9dBm,small signal power gain Gp=25.5 dB,PAEmax=17.2%.(2)This thesis studies the high gain power amplifier.The circuit uses a single three-stage Cascode structure to increase the gain of the power amplifier.A 65GHz power amplifier with high gain is designed based on the 0.13pμm SiGe BiCMOS process.Each stage uses a Cascode structure,so that the isolation between the input and output of the overall circuit is very high,and the circuit performance is greatly improved.In order to avoid the influence between more devices during layout design,the gate of the transistor is biased in series with voltage source and resistance,which is also beneficial for later chip debugging.The matching network uses a combination of inductors and capacitors,the inductor has a smaller layout area than the transmission line.The power supply voltage is 2.5V,the total power consumption is 186mWs and the overall circuit post-simulation result is obtained at the center frequency of 65GHz:Gp=45.7dB,OP1dB=10.2dBm,PAEmax=21.9%.