Design Of Broad Amplifier And Phase Shifter Based On CMOS Process

In recent years,the rapid development of wireless communication systems has led to the rapid growth of microwave and millimeter integrated circuits.Distributed amplifiers have high bandwidth and flat gain,making them an excellent choice for high speed,high frequency systems.The advent of the 5G era has made the phase shifter which is 5G millimeter wave front-end circuit more and more important How to combine the design of distributed amplifiers and phase shifters with the low power and low cost of CMOS technology is a major design challenge.Therefore,this thesis designs a millimeter-wave distributed amplifier circuit and a millimeter-wave phase shifter circuit based on CMOS technology.Firstly,the thesis briefly describes the CMOS technology used in the design,and then the high-frequency parasitic parameter model of MOSFET as well as capacitor and inductor passive components are introduced while the selection of "zero"capacitor and the design of on-chip inductor are analyzed and explained-And then the balun and quadrature signal generators which are used in the phase shifter circuit are introduced.Furthermore,a 50-110 GHz distributed amplifier in 65-nm CMOS technology is proposed in this thesis.The amplification units in which common source structure is employed are distributed between two microstrip lines.The inductor is replaced by a microstrip line in this circuit,making the circuit area more compact The results of simulation show that the circuit achieves small-signal gain of 3.5～4dB with gain-ripple of less 0.5dB.The chip,including the PAD,occupies an area of approximately 0.3 mm2 while consuming a DC power of 32.6mW from a 1.2V supply.Finally,a 60-80GHz phase shifter in 65-nm CMOS technology is proposed.The circuit adopts vector synthesis to realize phase shifting function.The circuit employs a Lange coupler to generate orthogonal signals which input to the balun to convert the signals into differential,and then the Gilbert units are utilized to control the amplitude of the two orthogonal signals to achieve phase shifting effect.The electromagnetic simulation of the circuit shows that the phase shifting range of the circuit reaches 360°with a step of 22.5° and a root mean square error of 4.5°.The conversion gain of the circuit is-6～0dB,the supply voltage is 1.2V with DC power consumption of 16.8mW,and the total chip area is about 0.25mm2(PAD not included).Two millimeter-wave circuits which is an exploration of the application of millimeter-wavelength circuits are designed in this thesis.It has a good reference for the design and application of high-performance millimeter-wave chip circuits based on CMOS technology in the future.