Resist-radiation Hardening Cell Library Design Verification Based On 0.13 Micro-meter CMOS Process

With the rapid development of space technology,facing the complex space radiation environment,how to strengthen the radiation resistance of integrated circuits applied in space has become a problem we must overcome.The ability of the standard cell library to resist radiation directly affects the performance of the circuit.As a bridge between design and process,standard cell library has to consider manufacturability in the design of standard cell library.Therefore,it is very important to design a cell library with anti-radiation ability to shorten the design cycle of IC used in space.The traditional resist-radiation hardening design means single,does not have the reusability,the design once the success rate is low,causes the design cycle to be too long,the reliability is low,loses the product competitiveness.Based on the research of total dose effect and single particle effect mechanism,combined with the experience of multi-year resist-radiation hardening design,a view is puts forward by this article that the design method of 0.13 micronmeter resist-radiation hardening standard cell library using IC design software,and optimizes the establishment process and design method of standard cell library.According to the requirements of design specification,design flow and performance index of cell library unit in the foundry,using resist-radiation hardening technology and reliability design technology,the Unit library is simulated and validated by the model database,and the cell library layout is formed.Through the test and radiation test of the process flow sheet to verify the electrical parameters and resist-radiation hardening performance,through the established resist-radiation hardening cell library design a radiation-resistant integrated circuit,using the design of the experimental circuit to verify the validity of the cell library,It can provide the design platform for designing 0.13 micron CMOS resist-radiation hardening digital integrated circuit,which lays the foundation for the design of large scale resist-radiation hardening integrated circuit.Resist-radiation hardening cell library design method of this paper can help the integrated circuit design,the layout design phase simulate the possible existence of actual manufacturing problems,provides a series of technical advantages and design innovation,and helps to improve the reliability of the integrated circuit design,with strong practical significance,to some extent,shorten the design cycle of the entire project.It has been designed that the PCM layout with existing resist-radiation hardening and reliability,and can produce stably and reliably on the domestic mature 0.13 micron commercial process line,and verifies the validity of the standard cell Library of the radiation-proof strengthening through testing and resist-radiation experiments,and finally completes the establishment of the standard cell Library of 0.13 micron resist-radiation hardening.