Study On Electrochemical Mechanical Polishing Process Of Copper And Silicon Carbide

With the development of IC manufacturing technology,the requirements for flattening are increased.ECMP adds electric field between test piece and polishing disk,which uses electrochemical anodize and mechanical to remove material.ECMP has high MRR and can be used under small load,it has a good application prospect.The relative trajectory equation was established.The mechanical polishing law was analyzed.The uniformity of electrochemical reaction of different mesh structures was obtained.The static corrosion,friction test and ECMP under various working conditions were completed.The mechanism of SiC-ECMP was analyzed.For Cu,static corrosion were carried out in H₂O,H₃PO₄ and HEDP.The best corrosion inhibition effect condition is obtained.The friction test and ECMP under different working conditions were performed,the COF are obtained and analyzed.The spiral order has the highest MRR,the leaf order has the best surface quality.For SiC,static corrosion tests were carried out in different polishing solutions.The friction test and ECMP in different working conditions were performed,the COF are analyzed.The orthogonal test with different voltages,abrasive particle,loads and concentrations were performed.Through variance and range analysis,the optimum condition is E=4 V,the small motor speed is 50 r/min,the abrasive concentration is 6%,the load is 20.5 N.In this case,MRR=1.98 um/h.For the mechanism of SiC-ECMP,the MRR model was established,the MRR's composition and proportion were obtained.The electrochemical reaction and oxidation process of SiC surface were analyzed,the relationship between oxidation layer thickness and time was obtained.The wear condition of polishing pad is observed and analyzed.Constant force loading and engraving experiments were carried out to observe the plastic-brittle transition point of SiC.