Terahertz Phase Shifter Based On Microstructure

The terahertz phase shifter is one of the important components of the terahertz phase control system,and it will directly affect the performance and cost of the terahertz phase control system.At present,with the development of new technologies and the improvement of the technological level,the research on terahertz phase shifters is becoming more and more diverse.However,there is still a lack of effective circuit methods to characterize terahertz phase shifters and the lack of commercial terahertz phase shifter components.According to the current development trend and application requirements of terahertz technology,this thesis studies the terahertz phase shifting technology.This paper discusses the scheme of loading microstructures in the standard rectangular waveguide WR-3,and adopts this scheme to realize the characteristics and related technologies of terahertz phase shifting.Main tasks are as follows.?1?A new idea of terahertz phase shifting by using a rectangular waveguide loading microstructure is proposed.Two microstructured phase shifters were designed,the first is a terahertz phase shifter that loads a"II"-shaped microstructure in a standard rectangular waveguide WR-3.The second is a terahertz phase shifter that loads an impedance microstructure in a standard rectangular waveguide WR-3.?2?Under the ingenious combination of micro-metal structures and Schottky diodes.Phase shifting of multiple states is achieved by Schottky diodes having different impedances at different bias voltages.?3?Using the above scheme,the phase shift characteristics of the 300 GHz-325GHz band were simulated and experimentally studied.Using five"II"-shaped phase shifter units,implemented phase shifts in 32 different states.The simulation obtained a maximum phase shift of 109o,and the average S₂₁?0.45dB of the 32 states,with an average S₁₁?20dB.In the study of terahertz phase shifter loaded with impedance microstructure,three phase shifting units were designed to achieve phase shifts of 60o,120o,and 180o,respectively.And each state of S₂₁?1dB,S₁₁?10dB.Static and dynamic test experiments were performed on the second terahertz phase shifter.In the310 GHz to 325 GHz frequency band,the static test experiment obtained large angle phase shifts of 50o,150oand 260o.In the frequency range of 300 GHz to 315 GHz,dynamic test experiments have achieved phase adjustments of 33o,44o,53o,58o,76o,and 139o.An impedance phase shifting scheme is adopted based on the symmetrical probe loading structure.It provides a new research idea for terahertz phase shifter,and provides a technical reserve for phase control equipment of terahertz waveguide structure.The electronically controlled adjustment of the phase shifter is performed using a Schottky diode.It provides a new idea for the hybrid integrated terahertz phase shifter electronic control mode,and provides a preliminary technical exploration and technical reserve for the integrated on-chip phase shifter.The quartz substrate used in the terahertz device has the problems of difficult punching and abnormal cutting,and the exploration of quartz substrate processing technology enriches the implementation of hybrid integrated terahertz devices.